SDA10S120 Semisouth, SDA10S120 Datasheet - Page 2

• Manufacturer Part Number: SDA10S120
• Description: DIODE, SIC, 1200V, 10A, TO220; Diode Type: SiC Schottky; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm...
• Manufacturer: Semisouth

Thermal Resistance,
junction-case
Thermal Resistance,
junction-ambient
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS, at T
SDA10S120 Rev 1.3
20
15
10
5
0
Figure 1. Typ. Forward Characteristics
0
Parameter
Parameter
I
F
1
= f(V
V
F
, Forward Voltage (V)
F
25 °C
); parameter: T
2
125 °C
3
Symbol
Symbol
j
R
R
Q
V
th JC
th JA
I
C
R
F
C
4
175 °C
j
V
V
V
V
= 25 C unless otherwise stated
5
R
V
I
V
R
R
R
I
F
R
F
= 1200 V, T
R
= 1200 V, T
= 600 V, f = 100KHz
= 10 A, T
= 300 V, f = 100kHz
PRELIMINARY
= 10 A, T
= 400 V, I
di/dt = 500A/us
= 1 V, f = 100kHz
Conditions
Conditions
2/5
j
j
= 175 ° C
F
= 25 ° C
j
j
= 175 ° C
= 10 A,
= 25 ° C
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
Figure 2. Typ. Reverse Characteristics
0
Min
Min
-
-
-
-
-
-
-
-
-
-
300
V
I
R
R
, Reverse Voltage (V)
= f(V
SDA10S120
Silicon Carbide
Value
Value
1153
Typ
Typ
200
1.1
1.6
2.4
62
10
40
48
33
R
600
)
125
25
75
175
o
o
Max
Max
o
C
100
C
1.8
2.9
o
C
C
-
-
-
-
-
-
-
900
March 2011
° C / W
Unit
Unit
nC
uA
pF
1200
V