SJDP120R085 SEMISOUTH, SJDP120R085 Datasheet - Page 4

• Manufacturer Part Number: SJDP120R085
• Description: JFET, SIC, N-ON, 1200V, 27A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJDP120R085

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 27A
• On Resistance Rds(on): 0.085ohm
• Power Dissipation Pd: 114W

SJDP120R085 Rev 1.4
800
700
600
500
400
300
200
100
1.E+03
1.E+02
1.E+01
E
Figure 11. Switching Energy Losses
Figure 7. Drain-Source On-resistance
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0
s
= f(I
10
Figure 9. Typical Capacitance
R
0
D
0
); V
T
T
DS(ON)
C = f(V
j
j
= 25
= 150
DS
T
25
j
= 600V; GD = +15V/-15V, R
V
= f(T
, Junction Temperature (°C)
o
DS
DS
C
o
C
I
D
300
); V
, Drain-Source Voltage (V)
, Drain Current (A)
j
); I
50
E
C
20
GS
off
D
rss
= 17A; parameter: V
= -15 V; f = 100 kHz
C
75
oss
600
100
E
C
on
30
iss
125
900
g(EXT)
GS
150
= 5 Ω
1V
0V
2V
E
(3)
1200
ts
175
PRELIMINARY
40
4/7
800
700
600
500
400
300
200
100
E
Figure 12. Switching Energy Losses
Figure 8. Drain-Source On-resistance
0
s
1E-04
1E-05
1E-06
1E-07
1E-08
= f(R
0
Figure 10. Drain-Source Leakage
0.095
0.090
0.085
0.080
0.075
0.070
I
g(EXT)
DSS
0
R
Rg
DS(on)
-1.0
= f(V
); V
(EXT)
5
DS
= f(V
DS
V
, External Gate Resistance ( )
V
DS
); V
= 600V; I
GS
300
, Drain-Source Voltage (V)
GS
, Gate-Source Voltage (V)
GS
); I
10
SJDP120R085
= -15V; parameter: T
D
0.0
= 17A; T
D
Silicon Carbide
= 17A, GD = +15V/-15V
600
15
j
= 25
1.0
o
C
900
20
j
150
May 2011
100
25
(3)
o
E
E
E
o
o
C
C
C
1200
ts
off
on
2.0
25