SJEP120R100 SEMISOUTH, SJEP120R100 Datasheet - Page 4

• Manufacturer Part Number: SJEP120R100
• Description: JFET, SIC, N-OFF, 1200V, 17A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 17A

SJEP120R100 Rev2.1
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.50
1.25
1.00
0.75
0.50
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
Figure 7. Drain-Source On-resistance
Figure 11. Gate Threshold Voltage
0
0
0
Figure 9. Typical Capacitance
R
DS(ON)
T
C = f(V
j
T
, Junction Temperature (
Typical
Max
j
, Junction Temperature (°C)
V
= f(T
C
DS
300
50
50
rss
DS
, Drain-Source Voltage (V)
j
); I
); V
V
D
GS
th
= 10A; parameter: I
C
= f(T
= 0 V; f = 1 MHz
oss
600
100
100
j
)
5mA
C
o
C)
iss
900
150
150
-2.0mV/
25mA
100mA
GS
o
C
1200
200
200
PRELIMINARY
4/8
Figure 8. Drain-Source On-resistance
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
0.094
0.092
0.090
0.088
0.086
0.084
0.082
0.080
0.078
0.076
Figure 12. Drain-Source Leakage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Q
g
BV
= f(V
0.1
I
0
R
0
D
DS
Figure 10. Gate Charge
DS(ON)
= f(V
, Drain-Source Blocking Voltage (V)
GS
I
GS
); V
DS
= f(I
, Gate-Source Current (mA)
Q
); V
DS
g
300
1.0
, Total Gate Charge (nC)
GS
= 600V; I
GS
10
); I
= 0V; parameter: Tj
SJEP120R100
D
= 10A; T
Silicon Carbide
10.0
D
600
= 5A, T
20
j
= 25
j
= 25
100.0
o
C
900
February 2011
o
C
100
150
30
25
o
o
1000.0
C
C
o
C
1200