SJEP170R550 SEMISOUTH, SJEP170R550 Datasheet - Page 4

• Manufacturer Part Number: SJEP170R550
• Description: JFET, SIC, N-OFF, 1700V, 4A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP170R550

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1700V
• Power Dissipation Pd: 58W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 4A

SJEP170R550 Rev 1.4
1.50
1.25
1.00
0.75
0.50
1000
100
10
Figure 7. Drain-Source On-resistance
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
1
Figure 11. Gate Threshold Voltage
0
0
Figure 9. Typical Capacitance
0
R
T
DS(ON)
Typical
C = f(V
300
j
Max
, Junction Temperature (
V
T
DS
j
, Junction Temperature (°C)
50
= f(T
V
, Drain-Source Voltage (V)
th
DS
50
600
= f(T
); V
j
); I
D
GS
j
), normalized
= 3A; parameter: I
= 0 V; f = 1 MHz
100
900
100
C
C
rss
oss
1200
o
C)
10mA
C
150
iss
150
-2.0mV/
1500
GS
100mA
o
1800
C
200
200
PRELIMINARY
4/7
4E-05
4E-05
3E-05
3E-05
2E-05
2E-05
1E-05
6E-06
5E-07
Figure 8. Drain-Source On-resistance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 12. Drain-Source Leakage
Q
0.500
0.490
0.480
0.470
0.460
0.450
0.440
0.430
0.420
g
BV
= f(V
0
0
I
R
D
DS
Figure 10. Gate Charge
DS(ON)
0.1
= f(V
, Drain-Source Blocking Voltage (V)
GS
); V
DS
I
2
= f(I
GS
Q
DS
); V
500
g
, Gate-Source Current (mA)
, Total Gate Charge (nC)
= 850V; I
GS
GS
); I
4
= 0V; parameter: Tj
SJEP170R550
1.0
D
= 3A; T
Silicon Carbide
D
1000
= 1.5A, T
6
j
= 25
10.0
j
8
o
C
= 25
1500
February 2011
o
C
25
10
175
125
o
C
o
o
C
100.0
C
2000
12