DG411HSDY-T1 Vishay, DG411HSDY-T1 Datasheet

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DG411HSDY-T1

Manufacturer Part Number
DG411HSDY-T1
Description
IC SWITCH QUAD SPST 16-SOIC
Manufacturer
Vishay
Datasheet

Specifications of DG411HSDY-T1

Function
Switch
Circuit
4 x SPST - NC
On-state Resistance
35 Ohm
Current - Supply
-1µA, 1&microA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG411HSDY-T1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG411HSDY-T1-E3
Manufacturer:
SIPEX
Quantity:
10 724
DESCRIPTION
The DG411HS series of monolithic quad analog switches
was designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (t
suited for portable and battery powered industrial and
military applications.
To achieve high-voltage ratings and superior switching
performance, the DG411HS series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411HS and DG412HS respond to opposite control
logic as shown in the Truth Table. The DG413HS has two
normally open and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72053
S11-0179-Rev. C, 07-Feb-11
TRUTH TABLE
GND
IN
IN
D
V -
D
S
S
1
1
1
4
4
4
Logic
Precision Monolithic Quad SPST CMOS Analog Switches
1
2
3
4
5
6
7
8
Dual-In-Line and SOIC
0
1
DG411HS
Top View
ON
: 68 ns), the DG411HS family is ideally
DG411HS
16
15
14
13
12
10
11
9
OFF
ON
IN
D
S
V+
V
S
D
IN
2
L
3
2
3
2
3
GND
S
V -
S
1
4
DG412HS
1
2
3
4
OFF
ON
16
5
D
D
1
4
DG411HS
QFN16
Top View
15
IN
IN
6
1
4
14
IN
IN
7
2
3
13
D
8
FEATURES
BENEFITS
APPLICATIONS
D
DG411HS, DG412HS, DG413HS
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - R
• Fast switching - t
• Ultra low power - P
• TTL, CMOS compatible
• Single supply capability
• Widest dynamic range
• Low signal rrrors and distortion
• Break-before-make switching action
• Simple interfacing
• Precision automatic test equipment
• Precision data acquisition
• Communication systems
• Battery powered systems
• Computer peripherals
2
3
12
11
10
9
S
V+
V
S
2
L
3
GND
NC
V -
Key
S
S
ON
DS(on)
1
4
D
: 68 ns
: 0.35 µW
4
5
6
7
8
: 25 
9
3
D
D
1
4
10
2
IN
IN
DG411HS
1
4
Top View
11 12
1
LCC
Vishay Siliconix
NC IN
NC IN
20
2
3
13
19
D
D
www.vishay.com
2
3
18
17
16
15
14
S
V+
NC
V
S
2
L
3
1

Related parts for DG411HSDY-T1

DG411HSDY-T1 Summary of contents

Page 1

... To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off ...

Page 2

... Plastic DIP 16-Pin Narrow SOIC 16-Pin QFN DG413HS LCC Key GND Top View Part Number DG411HSDJ DG411HSDJ-E3 DG412HSDJ DG412HSDJ-E3 DG411HSDY DG411HSDY-E3 DG411HSDY-T1 DG411HSDY-T1-E3 DG412HSDY DG412HSDY-E3 DG412HSDY-T1 DG412HSDY-T1-E3 DG411HSDN-T1-E4 DG412HSDN-T1-E4 DG413HSDJ DG413HSDJ-E3 DG413HSDY DG413HSDY-E3 DG413HSDY-T1 DG413HSDY-T1-E3 DG413HSDN-T1-E4 Document Number: 72053 S11-0179-Rev. C, 07-Feb- ...

Page 3

... V, see figure 2 Room S Full DG413HS only Room = 300   Room Vishay Siliconix Limit 44 25 (GND - 0.3) to (V+) + 0 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470 600 900 900 1880 A Suffix D Suffix - 55 °C to 125 ° ° °C c ...

Page 4

... DG411HS, DG412HS, DG413HS Vishay Siliconix a SPECIFICATIONS Parameter Symbol Dynamic Characteristics (Cont’d) e Off Isolation OIRR e Channel-to-Channel Crosstalk X TALK e Source Off Capacitance C S(off) e Drain Off Capacitance C D(off) e Channel On Capacitance C D(on) Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current I L Ground Current ...

Page 5

... Drain Voltage (V) D On-Resistance vs Document Number: 72053 S11-0179-Rev. C, 07-Feb-11 DG411HS, DG412HS, DG413HS °C A ± ± ± ± ± S(off) I D(off and Temperature Vishay Siliconix 300 ° 3.0 V 250 200 V+ = 5.0 V 150 100 Drain Voltage (V) D On-Resistance vs. V and Unipolar Supply Voltage ...

Page 6

... DG411HS, DG412HS, DG413HS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ± 100 - Drain Voltage (V) Charge Injection vs. Analog Voltage 140 120 100 OFF Temperature (°C) Switching Time vs. Temperature www.vishay.com 6 100 V = ± 100 140 120 100 105 125 100 I+, I- 100 µA 10 µ ...

Page 7

... Level Shift/ Drive Figure 300 Ω Note: Figure 2. Switching Time 300 Ω 300 Ω Figure 3. Break-Before-Make (DG413HS) Vishay Siliconix < Logic t < Input OFF Switch V S Input Logic input waveform is inverted for switches that have the opposite logic sense control 3 V Logic ...

Page 8

... Bypass Figure 6. Off-Isolation Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72053. ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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