dg411-883 Intersil Corporation, dg411-883 Datasheet
dg411-883
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dg411-883 Summary of contents
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... DG211 ON or DG212. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG411/883 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 40V signals ...
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... V Logic Reference Voltage Positive Power Supply Terminal (Substrate Source (Input) Terminal for Switch Drain (Output) Terminal for Switch Logic Control for Switch DG411/883 DG411/883 ...
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... Source OFF Leakage Current I S(OFF) Drain OFF Leakage Current I D(OFF) 3 DG411/883 Thermal Information Thermal Resistance (Typical, Notes 1, 2) θ CERDIP Package Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Operating Temperature (A Suffix .-55°C to +125°C Whichever Occurs First Storage Temperature Range (A Suffix .-65°C to +125°C Lead Temperature (Soldering 10s +300° ...
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... Device Tested at +15V -15V 5V, GND = 0V, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. PARAMETERS SYMBOL Turn ON Time t ON Turn OFF Time t OFF 4 DG411/883 GROUP A CONDITIONS SUBGROUP 16.5V, S(ON -16.5V ±15.5V S ...
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... F: ±20V -20 -15 - DRAIN VOLTAGE (V) FIGURE 1. ON-RESISTANCE vs V AND POWER SUPPLY D VOLTAGE 5 DG411/883 = 5V, GND = 0V, Unless Otherwise Specified. Parameters with MIN L GROUP A CONDITIONS SUBGROUP 0Ω +25° 10nF (see Figure 6V 0Ω +25° ...
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... SOURCE VOLTAGE (V) FIGURE 5. CHARGE INJECTION vs ANALOG VOLTAGE (V Test Circuits V is the steady state output with the switch on. O Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform. 6 DG411/883 (Continued) 100mA 10mA I 1mA D(OFF) 100µA 10µA ...
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... For load conditions, see Specifications C stray capacitance ----------------------------------- - = FIGURE 7B. FIGURE 7. SWITCHING TIME Burn-In Circuit DG411/883 SWITCH OUTPUT (includes fixture and dependent on switch configuration input polarity determined by X sense of switch ...
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... GND V- Die Characteristics DIE DIMENSIONS: 2760µm x 1780µm x 485 ± 25µm METALLIZATION: Type: SiAl Å Å Thickness: 12k ± 1k GLASSIVATION: Type: Nitride Å Å Thickness: 8k ± 1k WORST CASE CURRENT DENSITY 1 A/cm 8 DG411/883 (Typical Channel FN6726.0 June 13, 2008 ...
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... Metallization Mask Layout GND DG411/883 DG411/883 SUBSTRATE FN6726.0 June 13, 2008 ...
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... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 10 DG411/883 F16.3 c1 LEAD FINISH ...