SKYPER 32 PRO SEMIKRON, SKYPER 32 PRO Datasheet - Page 14

• Manufacturer Part Number: SKYPER 32 PRO
• Description: 16M0274
• Manufacturer: SEMIKRON

Specifications of SKYPER 32 PRO

• Device Type: IGBT
• Module Configuration: Half Bridge
• Peak Output Current: 15A
• Input Delay: 1.2µs
• Output Delay: 1.2µs
• Supply Voltage Range: 14.4V To 15.6V
• No. Of Pins: 20
• Rohs Compliant: Yes

High Voltage Diode for DSCP
The high voltage diode blocks the high voltage during IGBT off state. The connection of this diode between driver and IGBT
is shows in the following schematic.
Gate resistors
The output transistors of the driver are MOSFETs. The sources of the MOSFETs are separately connected to external
terminals in order to provide setting of the turn-on and turn-off speed of each IGBT by the external resistors R
As an IGBT has input capacitance (varying during switching time) which must be charged and discharged, both resistors will
dictate what time must be taken to do this. The final value of the resistance is difficult to predict, because it depends on
many parameters as DC link voltage, stray inductance of the circuit, switching frequency and type of IGBT.
SKYPER™ 32PRO R
Connection High Voltage Diode
Connection R
14
Please note:
Do not connect the terminals SEC_TOP_IGBT_ON with SEC_TOP_IGBT_OFF and SEC_BOT_IGBT_ON
with SEC_BOT_IGBT_OFF, respectively.
SEC_TOP_IGBT_ON
SEC_TOP_IGBT_OFF
SEC_TOP_GND
SEC_TOP_GND
SEC_BOT_IGBT_ON
SEC_BOT_IGBT_OFF
SEC_BOT_GND
SEC_BOT_GND
Gon
, R
Goff
User Side
R
R
R
R
Gon
Goff
Gon
Goff
R
10K
R
10K
GE
GE
TOP
BOT
Load
2007-01-19 – Rev03
Application Hints
The gate resistor influences the switching time, switching losses, dv/dt
behaviour, etc. and has to be selected very carefully. Due to this
influence a general value for the gate resistors cannot be
recommended. The gate resistor has to be optimized according to
switching behaviour and over voltage peaks within the specific
circuitry.
By increasing R
current of the free-wheeling diode will diminish.
By increasing R
inductive peak over voltage during turn-off will diminish.
In order to ensure locking of the IGBT even when the driver supply
voltage is turned off, a resistance (R
Characteristics
A collector series resistance R
connected for 1700V IGBT operation.
Reverse blocking voltage of the diode shall be higher than the
used IGBT.
Reverse recovery time of the fast diode shall be lower than V
rising of the used IGBT.
Forward voltage of the diode: 1,5V @ 2mA forward current
(T
j
=25°C).
Gon
Goff
the turn-on speed will decrease. The reverse peak
the turn-off speed of the IGBT will decrease. The
VCE
GE
) has to be integrated.
(1kΩ / 0,4W) must be
© by SEMIKRON
Gon
and R
CE
Goff
.