SI4884DY-T1 Vishay, SI4884DY-T1 Datasheet
SI4884DY-T1
Specifications of SI4884DY-T1
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SI4884DY-T1 Summary of contents
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... Top View Ordering Information: Si4884DY Si4884DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
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... Si4884DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 70946 S-03950—Rev. C, 26-May- 25_C J 0.8 1.0 1.2 Si4884DY Vishay Siliconix Capacitance 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1 ...
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... Si4884DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 = 250 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...