SI4884DY-T1 Vishay, SI4884DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4884DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4884DY-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0105Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 12A
• Power Dissipation: 2.95W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70946
S-03950—Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
8
6
4
2
0
50
10
1
0
0
0.00
V
I
D
DS
Source-Drain Diode Forward Voltage
= 12 A
On-Resistance vs. Drain Current
5
0.2
10
= 15 V
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
I
= 150_C
D
10
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
20
V
15
GS
0.6
= 4.5 V
30
20
0.8
V
GS
T
= 10 V
40
J
= 25_C
25
1.0
50
30
1.2
0.06
0.05
0.04
0.03
0.02
0.01
0.00
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 12 A
5
rss
V
2
V
GS
= 10 V
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
10
25
Capacitance
C
4
oss
Vishay Siliconix
50
15
C
iss
6
75
Si4884DY
I
20
D
= 12 A
100
www.vishay.com
8
25
125
10
150
30
2-3