SI4884DY-T1 Vishay, SI4884DY-T1 Datasheet - Page 3
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SI4884DY-T1
Manufacturer Part Number
SI4884DY-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet
1.SI4884DY-T1.pdf
(5 pages)
Specifications of SI4884DY-T1
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0105Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
12A
Power Dissipation
2.95W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4884DY-T1
Manufacturer:
VISHAY
Quantity:
5 470
Part Number:
SI4884DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4884DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 947
Part Number:
SI4884DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4884DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 70946
S-03950—Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
8
6
4
2
0
50
10
1
0
0
0.00
V
I
D
DS
Source-Drain Diode Forward Voltage
= 12 A
On-Resistance vs. Drain Current
5
0.2
10
= 15 V
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
I
= 150_C
D
10
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
20
V
15
GS
0.6
= 4.5 V
30
20
0.8
V
GS
T
= 10 V
40
J
= 25_C
25
1.0
50
30
1.2
0.06
0.05
0.04
0.03
0.02
0.01
0.00
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 12 A
5
rss
V
2
V
GS
= 10 V
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
10
25
Capacitance
C
4
oss
Vishay Siliconix
50
15
C
iss
6
75
Si4884DY
I
20
D
= 12 A
100
www.vishay.com
8
25
125
10
150
30
2-3