AM29LV640MB110REI Spansion Inc., AM29LV640MB110REI Datasheet - Page 4

• Manufacturer Part Number: AM29LV640MB110REI
• Manufacturer: Spansion Inc.

Specifications of AM29LV640MB110REI

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

GENERAL DESCRIPTION
The Am29LV640M is a 64 Mbit, 3.0 volt single power
supply flash memory device organized as 4,194,304
words o r 8,388 ,6 08 bytes. The device has an
8-bit/16-bit bus and can be programmed either in the
host system or in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (V
specified in
dering Information on page
a 48-pin TSOP, 63-ball Fine-pitch BGA or 64-ball Forti-
fied BGA package. Each device has separate chip en-
able (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V
(ACC) function provides shorter programming times
through increased current on the WP#/ACC input. This
feature is intended to facilitate factory throughput dur-
ing system production, but can also be used in the
field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to deter-
mine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
2
CC
input, a high-voltage accelerated program
Product Selector Guide on page 6
CC
) and an I/O voltage range (V
10. The device is offered in
D A T A
and
Am29LV640MT/B
IO
), as
Or-
S H E E T
Hardware data protection measures include a low
V
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This is achieved in-system or via programming equip-
ment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Sus-
pend/Program Resume feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin can be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The Write Protect (WP#) feature protects the top or
bottom two sectors by asserting a logic low on the
WP#/ACC pin. The protected sector is still protected
even during accelerated programming.
T h e S e c u r e d S i l i c o n S e c t o r p r o v i d e s a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
CC
detector that automatically inhibits write opera-
26190C8 February 1, 2007