AM29LV640MB90REI Spansion Inc., AM29LV640MB90REI Datasheet - Page 64
![no-image](/images/manufacturer_photos/0/6/621/spansion_inc__sml.jpg)
AM29LV640MB90REI
Manufacturer Part Number
AM29LV640MB90REI
Description
Manufacturer
Spansion Inc.
Datasheet
1.AM29LV640MB90REI.pdf
(66 pages)
Specifications of AM29LV640MB90REI
Cell Type
NOR
Density
64Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
3 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29LV640MB90REI
Manufacturer:
AMD
Quantity:
20 000
Company:
Part Number:
AM29LV640MB90REIT
Manufacturer:
AMD
Quantity:
1 000
REVISION SUMMARY
Revision A (April 26, 2002)
Initial release.
Revision B (May 23, 2002)
Changed packaging from 64-ball FBGA to 64-ball For-
tified BGA.
Changed Block Diagram: Moved V
Input/Output Buffers.
Changed Note about WP#/ACC pin to indicate internal
pullup to V
Revision B+1 (July 31, 2002)
MIRRORBIT 64 MBIT Device Family
Added 64 Fortified BGA to LV640MU device.
Alternate CE# Controlled Erase and Program
Operations
Added t
Erase and Program Operations
Added t
Figure 16. Program Operation Timings
Added RY/BY# to waveform.
TSOP and BGA PIN Capacitance
Added the FBGA package.
Program Suspend/Program Resume Command
Sequence
Changed 15 μs typical to maximum and added 5 μs
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20 μs to 5 μs and added a maxi-
mum of 20 μs.
Revision B+2 (August 9, 2002)
Valid Combinations for TSOP Package
Added 100R, 110R, and 120R OPNs.
Valid Combinations for BGA Package
Added 100R, 110R, and 120R OPNs.
CMOS Compatible
Added Note 8.
Special package handling instructions
Modified the special handling wording.
DC Characteristics table
Deleted the I
CFI
62
RH
BUSY
parameter to table.
CC
parameter to table.
ACC
.
specification row.
IO
from RY/BY# to
D A T A
Am29LV640MT/B
S H E E T
Changed text in the third paragraph of CFI to read
“reading array data.”
Revision B+3 (September 19, 2002)
Ordering Information
Deleted FI from Valid Combinations Table.
Revision B+4 (October 15, 2002)
Connection Diagrams
Changed from 56-Pin Standard TSOP to 48-Pin Stan-
dard TSOP.
Product Selector Guide
Added regulated OPNs.
Revision C (December 5, 2002)
Secured Silicon Sector Flash Memory Region, and
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
Noted that the A
are not available when the Secured Silicon sector is en-
abled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the Secured Silicon Sector, autoselect, and
CFI functions are unavailable when a program or
erase operation is in progress.
Common Flash Memory Interface (CFI)
Changed CFI website address.
Command Definitions
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.” to
...”may place the device to an unknown state. A reset
command is then required to return the device to read-
ing array data.”
CMOS Compatible
Added I
Removed V
V
CMOS table in the Am29LV640MH/L datasheet.
Changed V
Removed typos in notes.
AC Characteristics and Read-Only Operations
Changed the Chip Enable to Output High Z and Out-
put Enable to Output High Z Speed Options from 30
ns to 16 ns.
IL1
, V
IH1
LR
, V
parameter to table.
IH1
IL
IL2
, V
and V
, V
IH
CC
, V
IH2
function and unlock bypass modes
OL
IH2
, V
, and V
minimum to 1.9.
OL
, V
OH
OH1
26190C8 February 1, 2007
from table and added
, and V
OH2
from the