LH28F008SAN-85 Sharp Electronics, LH28F008SAN-85 Datasheet - Page 5

• Manufacturer Part Number: LH28F008SAN-85
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAN-85

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 85ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

sharp
1.
SHARP’s LH28F008SAN-85 8M-bit Flash Memory is the highest density nonvolatile read/write solution for solid state
storage. The LH28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and
low power consumption provide a more reliable, lower power, lighter weight and higher performance alternative to tradi-
tional rotating disk technology. The LH28F008SAN-85 brings new capabilities to portable computing. Application and
operating system software stored in resident flash memory arrays provide instant-on rapid execute-in-place and protection
from obsolescence through in-system software updates. Resident software also extends system battery life and increases
reliability by reducing disk drive accesses.
For high density data acquisition applications, the LH28F008SAN-85 offers a more cost-effective and reliable alternative to
SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take advantage of
the LH28F008SA’s nonvolatility, blocking and minimal system code requirements for flexible firmware and modular soft-
ware designs.
The LH28F008SAN-85 is offered in 44-lead PSOP package. Pin assignments simplify board layout when integrating
multiple devices in a flash memory array or subsystem. This device uses an integrated Command User Interface and state
machine for simplified block erasure and byte write. The LH28F008SAN-85 memory map consists of 16 separately
erasable 64K-byte blocks.
SHARP’s LH28F008SAN-85 employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity. Its 85ns access time provides superior performance when compared with magnetic storage media. A deep
powerdown mode lowers power consumption to 50µW maximum thru V
mentation and other low-power applications. The RP# power control input also provides absolute data protection during
system powerup/down.
* ETOX is a trademark of Intel Corporation.
•High-Density Symmetrically Blocked Architec-
•Extended Cycling Capability
•Automated Byte Write and Block Erase
•System Performance Enhancements
•Deep-Powerdown Mode
ture
- Sixteen 64K-Byte Blocks
- 100,000 Block Erase Cycles
- 1.6 Million Block Erase Cycles per Chip
- Command User Interface
- Status Register
- Erase Suspend Capability
- 10
- RY/BY# Status Output
FEATURES
µ
A I
CC
Maximum
8M-BIT (1MBit x 8) FLASH MEMORY
LH28F008SAN-85
LHF08SZM
• Very High-Performance Read
• Operating Temperature
• SRAM-Compatible Write Interface
• Hardware Data Protection Feature
• Industry Standard Packaging
• ETOX™ * Nonvolatile Flash Technology
• CMOS Process (P-type silicon substrate)
• Not designed or rated as radiation hardened
- 85ns Maximum Access Time
- 0˚C to +70˚C
- Erase/Write Lockout during Power Transi-
- 44-Lead PSOP
- 12V Byte Write/Block Erase
tions
CC
, crucial in portable computing, handheld instru-
2