LH28F160S5HT-L10 Sharp Electronics, LH28F160S5HT-L10 Datasheet - Page 12

• Manufacturer Part Number: LH28F160S5HT-L10
• Manufacturer: Sharp Electronics

Specifications of LH28F160S5HT-L10

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

sharp
NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. STS is V
4. RP# at GND±0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. See Section 4.5 for query data.
7. Command writes involving block erase, full chip erase, (multi) word/byte write or block lock-bit configuration are
8. Refer to Table 4 for valid D
9. Don’t use the timing both OE# and WE# are V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
V
(multi) word/byte write or block lock-bit configuration algorithms. It is floated during when the WSM is not busy,
in block erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or
deep power-down mode.
reliably executed when V
PPLK
Mode
Mode
and V
OL
IL
(if configured to RY/BY# mode) when the WSM is executing internal block erase, full chip erase,
PPH1
or V
IH
voltages.
for control pins and addresses, and V
1,2,3,9
3,7,8,9
1,2,3,9
3,7,8,9
Notes
Notes
3
3
4
9
9
3
3
4
9
9
PP
IN
=V
during a write operation.
PPH1
RP#
RP#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
Table 3.1. Bus Operations(BYTE#=V
Table 3. Bus Operations(BYTE#=V
and V
PP
≤V
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
CC
IH
IH
IH
IH
PPLK
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
0
0
#
#
=V
IL
, memory contents can be read, but not altered.
CC1/2
.
LHF16KA9
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
1
1
.
#
#
PPLK
OE#
OE#
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
or V
WE#
WE#
PPH1
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IH
for V
IL
)
See Table
See Table
Address
Address
)
Figure 4
Figure 4
7~11
7~11
PP
See
See
X
X
X
X
X
X
X
X
X
X
. See DC Characteristics for
V
V
X
X
X
X
X
X
X
X
X
X
X
X
X
X
PP
PP
DQ
High Z
High Z
High Z
Note 5
Note 6
High Z
High Z
High Z
Note 5
Note 6
DQ
D
D
D
D
OUT
OUT
0-15
IN
IN
0-7
Rev. 2.0
High Z
High Z
High Z
High Z
High Z
High Z
STS
STS
X
X
X
X
X
X
X
X
9