LH28F640BFHE-PTTL65 Sharp Electronics, LH28F640BFHE-PTTL65 Datasheet

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... P P RELIMINARY RODUCT LH28F640BFHE-PTTL65 S PECIFICATIONS ® Flash Memory 64M (4M × 16) (Model No.: LHF64FBH) Spec No.: FM022005 Issue Date: February 8, 2002 Integrated Circuits Group ...

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Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. • When using the products covered herein, ...

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TSOP Pinout................................................. 3 Pin Descriptions.......................................................... 4 Simultaneous Operation Modes Allowed with Four Planes .................................. 5 Memory Map .............................................................. 6 Identifier Codes and OTP Address for Read Operation ............................................. 7 Identifier Codes and OTP Address for Read Operation on Partition ...

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... Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number. * ETOX is a trademark of Intel Corporation. LHF64FBH LH28F640BFHE-PTTL65 64Mbit (4Mbit×16) Flexible Blocking Architecture • Eight 4K-word Parameter Blocks • ...

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WE# 11 RST WP ...

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... Use of this pin at 12V beyond these limits may reduce block cycling capability or cause permanent damage. DEVICE POWER SUPPLY (2.7V-3.6V): With V V SUPPLY flash memory are inhibited. Device operations at invalid V CC Characteristics) produce spurious results and should not be attempted. INPUT/OUTPUT POWER SUPPLY (2.7V-3.6V): Power supply for all input/output V ...

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Table 2. Simultaneous Operation Modes Allowed with Four Planes THEN THE MODES ALLOWED IN THE OTHER PARTITION IS: IF ONE Read Read PARTITION IS: Array ID/OTP Read Array X X Read ID/OTP X X Read Status X X Read Query ...

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BLOCK NUMBER ADDRESS RANGE 3FF000H - 3FFFFFH 134 4K-WORD 3FE000H - 3FEFFFH 133 4K-WORD 3FD000H - 3FDFFFH 132 4K-WORD 3FC000H - 3FCFFFH 131 4K-WORD 130 4K-WORD 3FB000H - 3FBFFFH 129 4K-WORD 3FA000H - 3FAFFFH 128 4K-WORD 3F9000H - 3F9FFFH 127 ...

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Table 3. Identifier Codes and OTP Address for Read Operation Manufacturer Code Manufacturer Code Device Code Top Parameter Device Code Block Lock Configuration Block is Unlocked Code Block is Locked Block is not Locked-Down Block is Locked-Down Device Configuration Code ...

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LHF64FBH [ 000088H Customer Programmable Area 000085H 000084H Factory Programmed Area 000081H Reserved for Future Implementation 000080H (DQ - Customer Programmable Area Lock Bit (DQ Factory Programmed Area Lock Bit (DQ Figure 3. OTP ...

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Table 5. Bus Operation Mode Notes RST# Read Array Output Disable V IH Standby V IH Reset Read Identifier Codes/OTP V Read Query 6,7 IH Write 4,5 NOTES: 1. ...

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... OTP block (See Table 3 and Table 4). The Read Query command is available for reading CFI (Common Flash Interface) information. 5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked block can be erased or programmed when RST ...

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LH28F640BF series for details the program operation in one partition is suspended and the erase operation in other partition is also suspended, the suspended program operation should be resumed first, and then the suspended erase operation should be ...

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Table 7. Functions of Block Lock Current State (1) State WP [000 ( [001] [011 [100 ( [101] ( [110] [111 NOTES: 1. ...

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Table 9. Block Locking State Transitions upon WP# Transition Current State Previous State State WP# - [000 [001] 0 (2) [110] [011] 0 (2) Other than [110] - [100 [101 [110 [111] ...

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WSMS BESS BEFCES 7 6 SR.15 - SR.8 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.7 = WRITE STATE MACHINE STATUS (WSMS Ready 0 = Busy SR.6 = BLOCK ERASE SUSPEND STATUS (BESS ...

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SMS XSR.15-8 = RESERVED FOR FUTURE ENHANCEMENTS (R) XSR.7 = STATE MACHINE STATUS (SMS Page Buffer Program available 0 = Page Buffer Program not available XSR.6-0 = RESERVED FOR FUTURE ENHANCEMENTS ...

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Table 12. Partition Configuration Register Definition PCR.15-11 = RESERVED FOR FUTURE ENHANCEMENTS (R) PCR.10-8 = PARTITION CONFIGURATION (PC2-0) 000 = No partitioning. Dual Work is not allowed. 001 = Plane1-3 are merged ...

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Electrical Specifications 1.1 Absolute Maximum Ratings Operating Temperature During Read, Erase and Program ...-40°C to +85°C Storage Temperature During under Bias............................... -40°C to +85°C During non Bias................................ -65°C to +125°C Voltage On Any Pin (except V and V ).............. ...

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Capacitance (T =+25°C, f=1MHz) A Parameter Symbol Input Capacitance C Output Capacitance C OUT NOTE: 1. Sampled, not 100% tested. 1.2.2 AC Input/Output Test Conditions V CCQ INPUT 0.0 AC test inputs are driven at V Input timing ...

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DC Characteristics Symbol Parameter I Input Load Current LI I Output Leakage Current Standby Current CCS Automatic Power Savings Current CCAS Reset Power-Down Current CCD CC Average V Read CC ...

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Symbol Parameter V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH V Lockout during Normal PP V PPLK Operations V during Block Erase, Full Chip PP V Erase, (Page ...

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AC Characteristics - Read-Only Operations Symbol t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay ELQV t Page Address Access Time APA t OE# to Output Delay GLQV t RST# High to ...

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(A) (A) 21-0 20 CE# ( OE# ( (W) WE High (D/Q) 15 (P) ...

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(A) (A) 21-3 20 (A) 2 (E) CE OE# ( WE# ( High ...

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AC Characteristics - Write Operations Symbol t Write Cycle Time AVAV RST# High Recovery to WE# (CE#) Going Low PHWL PHEL CE# (WE#) Setup to WE# (CE#) Going Low ELWL WLEL t (t ...

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NOTE 1 NOTE VALID A A (A) (A) 21-0 20-0 ADDRESS (E) CE ELWL WLEL V IH OE# ( PHWL PHEL V IH WE# ...

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Reset Operations V IH RST# ( High (D/Q) 15 RST# ( High (D/Q) 15 (min GND V ...

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Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance Symbol Parameter 4K-Word Parameter Block t WPB Program Time 32K-Word Main Block t WMB Program Time t / WHQV1 Word Program Time t EHQV1 t / WHOV1 ...

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Related Document Information Document No. FUM00701 NOTE: 1. International customers should contact their local SHARP or distribution sales offices. LHF64FBH (1) Document Name LH28F640BF series Appendix 28 Rev. 2.41 ...

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A-1 RECOMMENDED OPERATING CONDITIONS A-1.1 At Device Power-Up AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not ...

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A-1.1.1 Rise and Fall Time Symbol t V Rise Time Input Signal Rise Time R t Input Signal Fall Time F NOTES: 1. Sampled, not 100% tested. 2. This specification is applied for not only the ...

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A-1.2 Glitch Noises Do not input the glitch noises which are below V as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a). Input Signal V (Min (Max.) IL Input Signal ...

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... A-2 RELATED DOCUMENT INFORMATION Document No. AP-001-SD-E AP-006-PT-E AP-007-SW-E NOTE: 1. International customers should contact their local SHARP or distribution sales office. (1) Document Name Flash Memory Family Software Drivers Data Protection Method of SHARP Flash Memory RP#, V Electric Potential Switching Circuit PP iv Rev. 1.10 ...

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... Head Office: No. 360, Bashen Road, Xin Development Bldg. 22 Waigaoqiao Free Trade Zone Shanghai 200131 P.R. China Email: smc@china.global.sharp.co.jp EUROPE SHARP Microelectronics Europe Division of Sharp Electronics (Europe) GmbH Sonninstrasse 3 20097 Hamburg, Germany Phone: (49) 40-2376-2286 Fax: (49) 40-2376-2232 www.sharpsme.com SINGAPORE SHARP Electronics (Singapore) PTE., Ltd. ...