CY7C056V-12BBC Cypress Semiconductor Corp, CY7C056V-12BBC Datasheet - Page 11

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CY7C056V-12BBC

Manufacturer Part Number
CY7C056V-12BBC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C056V-12BBC

Density
576Kb
Access Time (max)
12ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
14b
Package Type
FBGA
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
385mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.465V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
172
Word Size
36b
Number Of Words
16K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C056V-12BBC
Manufacturer:
CY
Quantity:
122
Document #: 38-06055 Rev. *B
Switching Waveforms
Write Cycle No. 2: CE Controlled Timing
Write Cycle No. 1: R/W Controlled Timing
Notes:
CE
28. R/W must be HIGH during all address transitions.
29. A write occurs during the overlap (t
30. t
31. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
32. To access RAM, CE
33. To access byte B
34. Transition is measured ±150 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
35. During this period, the I/O pins are in the output state, and input signals must not be applied.
36. If the CE
DATA OUT
ADDRESS
ADDRESS
CE
DATA IN
DATA IN
0
to be placed on the bus for the required t
as short as the specified t
To access byte B
To access byte B
To access byte B
state.
HA
, CE
0
, CE
is measured from the earlier of CE
R/W
R/W
OE
1
[32, 33]
1
[32, 33]
0
LOW and CE
0
1
2
3
, CE
, CE
, CE
, CE
0
= V
0
0
0
0
1
= V
= V
= V
= V
HIGH or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance
IL
PWE
, CE
IL
IL
IL
IL
, B
, B
, B
, B
.
1
(continued)
t
t
0
1
2
3
=SEM = V
SA
SA
NOTE 35
= V
= V
= V
= V
SCE
IL
IL
IL
IL
0
, CE
, CE
, CE
, CE
or t
/CE
SD
IH
PWE
1
1
1
1
1
. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be
=SEM = V
=SEM = V
=SEM = V
=SEM = V
.
or R/W or (SEM or R/W) going HIGH at the end of Write Cycle.
) of CE
t
[28, 29, 30, 36]
HZWE
[28, 29, 30, 31]
0
IH
IH
IH
IH
=V
.
.
.
.
[34]
IL
CHIP SELECT VALID
and CE
t
t
AW
CHIP SELECT VALID
AW
t
t
WC
WC
1
t
=V
t
SCE
PWE
IH
or SEM=V
[31]
IL
t
t
SD
SD
and B
0–3
PWE
LOW.
or (t
HZWE
t
t
HA
HA
t
t
+ t
HD
HD
SD
t
LZWE
) to allow the I/O drivers to turn off and data
t
HZOE
NOTE 35
CY7C056V
CY7C057V
[34]
Page 11 of 23
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