CY7C1347B-166BGC Cypress Semiconductor Corp, CY7C1347B-166BGC Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/1/179/cypress_semiconductor_corp_sml.jpg)
CY7C1347B-166BGC
Manufacturer Part Number
CY7C1347B-166BGC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1347B-166BGC.pdf
(17 pages)
Specifications of CY7C1347B-166BGC
Density
4Mb
Access Time (max)
3.5ns
Package Type
BGA
Operating Temp Range
0C to 70C
Supply Current
420mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
119
Word Size
36b
Lead Free Status / Rohs Status
Not Compliant
Write Cycle Description
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
Ambient Temperature with
Power Applied
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Notes:
4.
5.
6.
7.
8.
Read
Read
Write Byte 0 - DQ
Write Byte 1 - DQ
Write Bytes 1, 0
Write Byte 2 - DQ
Write Bytes 2, 0
Write Bytes 2, 1
Write Bytes 2, 1, 0
Write Byte 3 - DQ
Write Bytes 3, 0
Write Bytes 3, 1
Write Bytes 3, 1, 0
Write Bytes 3, 2
Write Bytes 3, 2, 0
Write Bytes 3, 2, 1
Write All Bytes
Write All Bytes
X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ
inactive or when the device is deselected, and DQ
Minimum voltage equals 2.0V for pulse durations of less than 20 ns.
T
A
is the case temperature.
[7]
[7]
Function
[7:0]
[15:8]
[23:16]
[31:24]
DD
Relative to GND
[4, 5, 6]
0.5V to V
0.5V to V
[31:0]
65 C to +150 C
55 C to +125 C
0.5V to +4.6V
;DP
[3:0]
DD
DD
GW
= data when OE is active.
+ 0.5V
+ 0.5V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
8
BWE
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Com’l
Ind’l
Range
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
X
–40 C to +85 C
Temperature
0 C to +70 C
BW
Ambient
X
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
X
3
[3:0]
. Writes may occur only on subsequent clocks
[8]
BW
X
X
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
2
5%/+10%
3.3V
V
[31:0]
DD
CY7C1347B
;DP
BW
X
X
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
[3:0]
1
= High-Z when OE is
3.3V /+10%
2.5V 5%
V
DDQ
BW
X
X
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0