AM29LV128MH123REI Spansion Inc., AM29LV128MH123REI Datasheet - Page 3

• Manufacturer Part Number: AM29LV128MH123REI
• Manufacturer: Spansion Inc.

Specifications of AM29LV128MH123REI

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3/11.5 to 12.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 43mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

Am29LV128MH/L
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit™ 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O™ Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not recommended for designs. For new and current designs, S29GL256N supersedes Am29LV128MH/L and is the factory-rec-
ommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this document is retained for refer-
ence and historical purposes only
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O™ control
— Device generates data output voltages and tolerates
Manufactured on 0.23 µm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 s typical effective write buffer word programming
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
data input voltages on the CE# and DQ
inputs/outputs as determined by the voltage on the
V
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
single-power supply flash, and superior inadvertent
write protection
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
IO
DATA SHEET
pin; operates from 1.65 to 3.6 V
.
.
SOFTWARE & HARDWARE FEATURES
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
— CFI (Common Flash Interface) compliant: allows host
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Group Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
before programming operation is completed
sectors before an erase operation is completed
multiple-word or byte programming time
system to identify and accommodate multiple flash
devices
preventing write operations within a sector group
of changing code in locked sector groups
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
erase cycle completion
Publication# 25270
Issue Date: January 31, 2007
Rev: C Amendment: 7
ID
-level method