AM29LV128MH123REI Spansion Inc., AM29LV128MH123REI Datasheet - Page 60

• Manufacturer Part Number: AM29LV128MH123REI
• Manufacturer: Spansion Inc.

Specifications of AM29LV128MH123REI

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3/11.5 to 12.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 43mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
3. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
6. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
7. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
8. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
9. The device has a minimum erase and program cycle endurance of 100,000 cycles.
60
Parameter
Sector Erase Time
Chip Erase Time
Single Word Program Time
Accelerated Single Word Program Time
(Note
Total Write Buffer Program Time
Effective Write Buffer Program
Time
Total Accelerated Write Buffer Program Time
(Note
Effective Accelerated Write
Buffer Program Time
(Note
Chip Program Time
all bits are programmed to 00h.
program/erase cycles.
program faster than the maximum program times listed.
Table 11
(Note
3)
4)
5)
5)
for further information on command definitions.
(Note
(Note
3)
Per Word
Per Word
Per Byte
Per Byte
4)
D A T A
Typ (Note 1)
Am29LV128MH/L
6.25
12.5
128
240
200
126
0.5
7.5
60
54
15
S H E E T
Max (Note 2)
1200
1040
256
600
540
292
3.5
38
75
33
65
CC
. Programming specifications assume that
Unit
sec
sec
sec
µs
µs
µs
µs
µs
µs
µs
µs
Excludes 00h programming
prior to erasure (Note 6)
Excludes system level
25270C7 January 31, 2007
overhead
Comments
(Note
8)