CAT25C256K-TE13 ON Semiconductor, CAT25C256K-TE13 Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
CAT25C256K-TE13
Manufacturer Part Number
CAT25C256K-TE13
Description
Manufacturer
ON Semiconductor
Datasheet
1.CAT25C256K-TE13.pdf
(10 pages)
Specifications of CAT25C256K-TE13
Density
256Kb
Interface Type
Serial (SPI)
Organization
32Kx8
Access Time (max)
250ns
Frequency (max)
3MHz
Write Protection
Yes
Data Retention
100Year
Operating Supply Voltage (typ)
3.3/5V
Package Type
SOIC EIAJ
Operating Temp Range
0C to 70C
Supply Current
10mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CAT25C256K-TE13
Manufacturer:
CATALYST
Quantity:
20 000
WRITE Sequence
The CAT25C128/256 powers up in a Write Disable
state. Prior to any write instructions, the WREN instruc-
tion must be sent to CAT25C128/256. The device goes
into Write enable state by pulling the CS low and then
clocking the WREN instruction into CAT25C128/256.
The CS must be brought high after the WREN instruction
to enable writes to the device. If the write operation is
initiated immediately after the WREN instruction without
CS being brought high, the data will not be written to the
array because the write enable latch will not have been
properly set. Also, for a successful write operation the
address of the memory location(s) to be programmed
must be outside the protected address field location
selected by the block protection level.
Note: Dashed Line= mode (1, 1) — — — —
Figure 5. RDSR Timing
Note: Dashed Line= mode (1, 1) — — — —
CS
SCK
Figure 4. Read Instruction Timing
CS
SO
SK
SO
SI
SI
*Please check the instruction set table for address
0
0
0
0
0
1
0
0
2
1
0
OPCODE
3
HIGH IMPEDANCE
OPCODE
0
2
0
4
0
0
HIGH IMPEDANCE
5
3
1
6
0
4
1
7
1
8
5
9
BYTE ADDRESS*
6
0
10
1
7
7
20
MSB
Byte Write
Once the device is in a Write Enable state, the user may
proceed with a write sequence by setting the CS low,
issuing a write instruction via the SI line, followed by the
16-bit address (the most significant bit is don't care for
25C256 and the two most significant bits are don't care
for the 25C128), and then the data to be written. Pro-
gramming will start after the CS is brought high. The low
to high transition of the CS pin must occur during the
SCK low time, immediately after clocking the least
significant bit of the data. Figure 6 illustrates byte write
sequence.
21
8
7
22
9
6
23
10
24
MSB
5
7
25
6
11
4
26
DATA OUT
5
12
27
3
DATA OUT
4
28
3
13
2
29
2
Doc. No. 25088-00 8/99 SPI-1
14
30
1
1
0
0