PSMN005-30K NXP Semiconductors, PSMN005-30K Datasheet - Page 6

• Manufacturer Part Number: PSMN005-30K
• Description: SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN005-30K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 20A
• Power Dissipation: 3.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN005-30K_1
Product data sheet
Fig 5.
Fig 7.
(pF)
(A)
I
C
D
10 2
60
40
20
10
0
1
10 -1
function of drain-source voltage; typical values
as a function of drain-source voltage; typical
values
Output characteristics: drain current as a
Input, output and reverse transfer capacitances
0
0.2
10 V
1
4.5 V
0.4
0.6
10
V
V DS (V)
0.8
GS
C iss
C oss
C rss
V
4 V
3.8 V
3.6 V
3.4 V
3.2 V
= 3 V
DS
03ah18
03ah06
(V)
Rev. 01 — 17 November 2009
10 2
1
Fig 6.
Fig 8.
N-channel TrenchMOS SiliconMAX logic level FET
(A)
I
D
(A)
I
10
10
10
10
10
D
10
60
40
20
1
-1
-2
-4
-3
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
DS
> I
D
1
× R
1
T
min
DSon
j
= 150 °C
2
PSMN005-30K
2
typ
3
25 °C
3
© NXP B.V. 2009. All rights reserved.
max
4
V
V
GS
GS
03ah08
03af66
(V)
(V)
5
4
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