PSMN005-30K NXP Semiconductors, PSMN005-30K Datasheet - Page 8

• Manufacturer Part Number: PSMN005-30K
• Description: SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN005-30K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 20A
• Power Dissipation: 3.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN005-30K_1
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
−1
1
10
V
DS
C
C
C
(V)
03ah10
iss
oss
rss
Rev. 01 — 17 November 2009
10
2
Fig 14. Source current as a function of source-drain
N-channel TrenchMOS SiliconMAX logic level FET
(A)
I
S
60
40
20
0
voltage; typical values
0
V
GS
= 0 V
T
j
= 150 °C
0.4
PSMN005-30K
0.8
25 °C
© NXP B.V. 2009. All rights reserved.
V
SD
(V)
03ah09
1.2
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