AM29LV800DB-70EI Spansion Inc., AM29LV800DB-70EI Datasheet - Page 3

• Manufacturer Part Number: AM29LV800DB-70EI
• Manufacturer: Spansion Inc.

Specifications of AM29LV800DB-70EI

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Am29LV800D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Manufactured on 0.23 µm process technology
■ High performance
■ Ultra low power consumption (typical values at
■ Flexible sector architecture
■ Unlock Bypass Program Command
■ Top or bottom boot block configurations
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not recommended for designs. For new and current designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration path
for this device. Please refer to the S29AL008D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
— 2.7 to 3.6 volt read and write operations for
— Compatible with 0.32 µm Am29LV800 device
— Access times as fast as 70 ns
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports full chip erase
— Sector Protection features:
— Reduces overall programming time when
available
battery-powered applications
fifteen 64 Kbyte sectors (byte mode)
fifteen 32 Kword sectors (word mode)
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
issuing multiple program command sequences
DATA SHEET
■ Embedded Algorithms
■ Minimum 1 million write cycle guarantee
■ 20-year data retention at 125°C
■ Package option
■ Compatibility with JEDEC standards
■ Data# Polling and toggle bits
■ Ready/Busy# pin (RY/BY#)
■ Erase Suspend/Erase Resume
■ Hardware reset pin (RESET#)
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
per sector
— Reliable operation for the life of the system
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
— Pinout and software compatible with
— Superior inadvertent write protection
— Provides a software method of detecting
— Provides a hardware method of detecting
— Suspends an erase operation to read data from,
— Hardware method to reset the device to reading
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
single-power supply Flash
program or erase operation completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
array data
Publication # Am29LV800D_00 Revision: A
Amendment: 7 Issue Date: December 4, 2006