IRF2907ZSTRL International Rectifier, IRF2907ZSTRL Datasheet

IRF2907ZSTRL

Manufacturer Part Number
IRF2907ZSTRL
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRF2907ZSTRL

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0045Ohm
Drain-source On-volt
75V
Gate-source Voltage (max)
±20V
Continuous Drain Current
170A
Power Dissipation
300W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF2907ZSTRLPBF
Quantity:
9 000
Features
l
l
l
l
l
l
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in
applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
HEXFET
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
CS
JA
JA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
a wide variety of
k
Parameter
Parameter
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Wirebond Limited)
IRF2907ZPbF
TO-220AB
i
j
G
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
IRF2907ZSPbF
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
D
S
-55 to + 175
IRF2907ZSPbF
IRF2907ZLPbF
D
2
Max.
160 *
IRF2907ZPbF
170
120
680
300
± 20
270
690
Pak
2.0
®
R
Power MOSFET
0.50
DS(on)
Max.
V
–––
62
40
I
DSS
D
l
IRF2907ZLPbF
= 160A
PD - 95489D
= 4.5m
= 75V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF2907ZSTRL

IRF2907ZSTRL Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance k R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA R Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G TO-220AB IRF2907ZPbF Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Wirebond Limited Parameter ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C ...

Page 5

Limited By Package 160 140 120 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 0.05 10 0.10 1 0.1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 TOP Single Pulse BOTTOM 1% Duty Cycle 250 75A 200 150 100 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead - Free" TO-220AB packages are not recommended ...

Page 10

THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASS EMBLY LINE "C" OR Notes: 1. For an ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

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