IRF2907ZSTRL International Rectifier, IRF2907ZSTRL Datasheet - Page 2

• Manufacturer Part Number: IRF2907ZSTRL
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF2907ZSTRL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0045Ohm
• Drain-source On-volt: 75V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 170A
• Power Dissipation: 300W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Not Compliant

Notes:

‚
ƒ
„
…
†
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
2
g
gs
gd
rr
Repetitive rating; pulse width limited by
R
Part not recommended for use above this value.
I
Pulse width
C
charging time as C
0 to 80% V
V
Limited by T
repetitive avalanche performance.
T
max. junction temperature. (See fig. 11).
Limited by T
SD
DSS
G
J
oss
eff.
= 25 , I
/ T
175°C.
eff. is a fixed capacitance that gives the same
75A, di/dt
J
DSS
AS
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Jmax
= 75A, V
1.0ms; duty cycle
= 25°C (unless otherwise specified)
.
, starting T
340A/µs, V
, see Fig.12a, 12b, 15, 16 for typical
Parameter
oss
while V
GS
=10V.
Parameter
J
™
DD
= 25°C, L=0.095mH,
DS
is rising from
V
(BR)DSS
2%.
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
75
‡
ˆ
‰
Š
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
TO-220 device will have an Rth of 0.45°C/W.
allowable junction temperature. Bond wire current limit is
160A.Note that current limitations arising from heating of
the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140
technical-info/appnotes/an-1140.pdf)
Calculated continuous current based on maximum
0.069
7500
3640
1020
is measured at
–––
–––
–––
–––
–––
–––
–––
180
140
100
970
510
650
–––
–––
–––
3.5
5.0
46
65
19
97
13
41
59
160*
-200
–––
–––
–––
250
200
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
680
4.5
4.0
1.3
20
61
89
V/°C
m
nC
nH
nC
T
µA
nA
pF
ns
ns
2
V
V
S
A
V
J
Pak, when mounted on 1" square PCB
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 2.5
= V
= 25V, I
= 75V, V
= 75V, V
= 60V
= 38V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
f
f
Conditions
Conditions
D
DS
S
F
http://www.irf.com/
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A, V
= 75A, V
= 75A
= 75A
= 0V to 60V
= 1.0V, ƒ = 1.0MHz
= 60V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
f
D
= 1mA
DD
GS
J
G
= 125°C
= 38V
= 0V
G
f
S
D
S
D