MRF9180 Freescale Semiconductor, MRF9180 Datasheet - Page 8

MRF9180

Manufacturer Part Number
MRF9180
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9180

Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
40W
Power Gain (typ)@vds
17.5dB
Frequency (min)
865MHz
Frequency (max)
895MHz
Package Type
NI-1230
Pin Count
5
Forward Transconductance (typ)
6S
Output Capacitance (typ)@vds
77@26VpF
Reverse Capacitance (typ)
3.8@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Screw
Mode Of Operation
CDMA
Number Of Elements
1
Power Dissipation (max)
388000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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MRF9180R6
8
Figure 10. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
MHz
865
880
895
f
= Test circuit impedance as measured from
= Test circuit impedance as measured
V
DD
gate to gate, balanced configuration.
from drain to drain, balanced configuration.
= 26 V, I
Z
Z
source
o
+
-
= 5 Ω
2.95 - j0.00
2.48 - j0.67
2.44 - j1.18
DQ
Z
source
= 1400 mA, P
Device
Under
Test
Ω
f = 895 MHz
Z
source
out
f = 865 MHz
= 170 W PEP
Z
3.83 - j1.02
3.55 - j1.38
3.34 - j1.51
load
f = 895 MHz
-
+
Z
load
Ω
f = 865 MHz
Output
Matching
Network
Z
load
Freescale Semiconductor
RF Device Data

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