DS90C3202VS National Semiconductor, DS90C3202VS Datasheet - Page 3

• Manufacturer Part Number: DS90C3202VS
• Manufacturer: National Semiconductor

Specifications of DS90C3202VS

• Operating Temperature (min): 0C
• Operating Temperature (max): 70C
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Lead Free Status / Rohs Status: Not Compliant

CMOS/TTL DC SPECIFICATIONS (Rx outputs, control inputs and outputs)
V
V
V
V
V
I
I
LVDS RECEIVER DC SPECIFICATIONS
V
V
V
|V
V
I
IN
OS
IN
Symbol
IH
IL
OH
OL
CL
TH
TL
IN
CM
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
ID
|
Supply Voltage (V
LVCMOS/LVTTL Input
Voltage
LVCMOS/LVTTL Output
Voltage
LVDS Receiver Input Voltage
Junction Temperature
Storage Temperature
Lead Temperature
Maximum Package Power Dissipation Capacity
(Soldering, 10 sec.)
128 TQFP Package:
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Clamp Voltage
Input Current
Output Short Circuit Current
Differential Input High Threshold
Differential Input Low Threshold
Input Voltage Range
(Single-ended)
Differential Input Voltage
Differential Common Mode
Voltage
Input Current
DD
Parameter
)
−0.3V to (V
−0.3V to (V
−0.3V to (V
−65˚C to +150˚C
−0.3V to +4V
Rx clock out
Rx data out
Rx clock out
Rx data out
I
V
V
V
V
V
V
DD
DD
DD
CL
IN
IN
OUT
CM
IN
IN
(Note 1)
= −18 mA
+ 0.3V)
+ 0.3V)
+ 0.3V)
+150˚C
+260˚C
= V
= 0V
= +2.4V, V
= 0V, V
= +1.2V
@
1.4W
= 0V
DD
25˚C
DD
Conditions
DD
= 3.6V
3
= 3.6V
I
I
I
I
Recommended Operating
Conditions
OH
OH
OL
OL
Supply Voltage (V
Operating Free Air
Supply Noise Voltage (V
Receiver Input Range
Input Clock Frequency (f)
Package Derating:
ESD Rating:
= +4 mA
= +2 mA
Temperature (T
= −4 mA
= −2 mA
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
A
DD
)
)
0.200
−100
Min
−10
2.0
2.4
0.2
0
0
P-P
)
25.6mW/˚C above +25˚C
3.15
Min Nom Max
−0.8
Typ
0
0
8
1.2
+25
3.3
V
0.600
DD
−120
+100
−1.5
Max
V
+10
V
±
±
0.8
0.4
±
V
+70
135
DD
DD
10
10
3.6
−0.1
100 mV
DD
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200 V
2 kV
Units
MHz
˚C
Units
V
V
p-p
mA
mV
mV
µA
µA
µA
µA
V
V
V
V
V
V
V
V