HMMC-5021 Avago Technologies US Inc., HMMC-5021 Datasheet

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HMMC-5021

Manufacturer Part Number
HMMC-5021
Description
Manufacturer
Avago Technologies US Inc.
Type
General Purposer
Datasheet

Specifications of HMMC-5021

Number Of Channels
1
Frequency (max)
22GHz
Output Power
18@22000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (max)
8V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Supply Current
250@7VmA
Lead Free Status / Rohs Status
Compliant
Avago HMMC-5021 (2–22 GHz),
HMMC-5026 (2–26.5 GHz)
GaAs MMIC Traveling Wave Amplifiers
Data Sheet
Description
The HMMC-5021/26 is a broadband GaAs MMIC Trav-
eling Wave Amplifier designed for high gain and
moderate output power over the full 2 to 26.5 GHz
frequency range. Seven MESFET cascode stages provide
a flat gain response, making the HMMC-5021/26 an ideal
wideband gain block. Optical lithography is used to
produce gate lengths of ≈0.4 µm. The HMMC-5021/26
incorporates advanced MBE technology, Ti-Pt-Au gate
metallization, silicon nitride passivation, and polyimide
for scratch protection.
Absolute Maximum Ratings
Symbol
V
I
V
I
V
I
P
P
T
T
T
T
Notes:
1. Operation in excess of any one of these conditions may result in
2.
DD
G1
G2
ch
case
stg
max
DD
G1
G2
DC
in
permanent damage to this device. T
Minimum voltage on V
[2]
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
First Gate Voltage
First Gate Current
Second Gate Voltage
Second Gate Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
Max. Assembly Temp.
(for 60 seconds max.)
G2
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
must not violate the following: V
[1]
A
= 25°C except for T
Units
V
mA
V
mA
V
mA
watts
dBm
°C
°C
°C
°C
2980 x 770 µm (117.3 x 30.3 mils)
±10 µm (±0.4 mils)
127 ± 15 µm (5.0 ± 0.6 mils)
75 x 75µm (2.95 x 2.95 mils), or larger
G2
Min.
-5
-9
-2.5
-7
-55
-65
(min) > V
ch
, T
STG
DD
, and T
Max.
8.0
250
0
+5
+3.5
2.0
23
+150
+165
300
- 9 volts.
max
.
Features
• Wide-frequency range:
• High gain:
• Gain flatness:
• Return loss:
• Low-frequency operation capability:
• Gain control:
• Moderate power:
2 – 26.5 GHz
9.5 dB
±0.75 dB
Input: -14 dB
Output: -13 dB
<2 GHz
35 dB dynamic range
20 GHz: P
P
26.5 GHz: P
P
sat
sat
: 20 dBm
: 17 dBm
-1dB
-1dB
: 18 dBm
: 15 dBm

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HMMC-5021 Summary of contents

Page 1

... Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/26 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈0.4 µm. The HMMC-5021/26 ...

Page 2

... I Second Gate Pinch-Off Current (V DSOFF θ Thermal Resistance (T = 25°C) ch-bs backside Notes: = 25°C. (Except θ 1. Measured in wafer form withT chuck HMMC-5021, -5026 RF Specifications, V Symbol Parameters/Conditions BW Guaranteed Bandwidth S Small Signal Gain 21 DS Small Signal Gain Flatness 21 RL Minimum Input Return Loss ...

Page 3

... DD Aux. Drain RF Input Single Stage Shown Figure 1. Schematic. 3 The HMMC-5021/ coupled amplifier. External cou- pling capacitors are needed and RF OUT ports. The drain bias pad is connected to RF and must be decoupled to the lowest operating frequency. The auxiliary gate and drain con- tacts are provided when perfor- mance below 1 GHz in required ...

Page 4

... 2.0 mil nom. gap 0.7 mil dia. Gold Bond Wire (Length NOT important) Figure 3. HMMC-5021/26 Assembly Diagram. (For 2.0 –26.5 GHz Operation) 4 Temp. Diode Sense Temp. Diode Force 200 1695 2980 (± 10 µm) ≥68 pF Capacitor Input and Output Thin Film Gold Plated Shim 2 ...

Page 5

... HMMC-5021/26 Typical Performance 150 FREQUENCY (GHz) Figure 4. Typical Gain and Reverse Isolation vs. Frequency. [1] Typical Scattering Parameters , (T chuck Freq GHz dB Mag Ang 2.0 -22.6 0.074 -174.1 3.0 -30.6 0.030 130.4 4.0 -37.8 0.013 -19.8 5.0 -29.4 0.034 -79.9 6.0 -26.6 0.047 -113 ...

Page 6

... HMMC-5021/26 Typical Temperature Performance 25°C) = 150 .022 dB/°C 14 .015 dB/°C .03 dB/° 26.5 FREQUENCY (GHz) Figure 6. Typical Small-Signal Gain vs. Temperature 7 (Q) = 150 P(sat) 20 P(–1 dB 26.5 FREQUENCY (GHz) Figure 8. Typical 1 dB Gain Compression and Saturated Output Power. Note: 1. All data measured on individual devices mounted in an HP83040 Series Modular Microcircuit Package @ 25° ...

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