MRF372 Freescale Semiconductor, MRF372 Datasheet - Page 11
![](/photos/40/58/405827/ni-860c3-5_sml.jpg)
MRF372
Manufacturer Part Number
MRF372
Description
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF372.pdf
(16 pages)
Specifications of MRF372
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
17A
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
17dB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
NI-860C3
Pin Count
5
Forward Transconductance (typ)
2.6S
Input Capacitance (typ)@vds
260@32VpF
Output Capacitance (typ)@vds
69@32VpF
Reverse Capacitance (typ)
2.5@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
37%
Mounting
Screw
Mode Of Operation
2-Tone
Power Dissipation (max)
350000mW
Vswr (max)
3
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF372
Manufacturer:
SAMSUNG
Quantity:
860 000
Part Number:
MRF372
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
RF Device Data
Freescale Semiconductor
Figure 15. Broadband Series Equivalent Source and Load Impedance
Z
source
Z
f = 470 MHz
o
= 10 Ω
Input
Matching
Network
Z
Z
source
load
MHz
470
560
660
760
860
f = 860 MHz
f
V
= Test circuit impedance as measured from
= Test circuit impedance as measured
DD
= 32 V, I
gate to gate, balanced configuration.
from drain to drain, balanced configuration.
Z
source
6.40 + j1.06
7.84 + j0.14
6.67 + j0.46
6.25 + j0.31
4.46 - j2.57
DQ
Z
+
−
source
= 1000 mA, P
Ω
Device
Under
Test
out
= 180 W PEP
4.88 - j3.50
5.45 - j0.07
8.13 + j0.73
7.52 + j0.02
8.27 - j1.00
Z
Z
load
−
+
load
Ω
Output
Matching
Network
Z
load
MRF372R3 MRF372R5
f = 470 MHz
Z
o
f = 860 MHz
= 10 Ω
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