MRF372 Freescale Semiconductor, MRF372 Datasheet - Page 6
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MRF372
Manufacturer Part Number
MRF372
Description
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF372.pdf
(16 pages)
Specifications of MRF372
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
17A
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
17dB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
NI-860C3
Pin Count
5
Forward Transconductance (typ)
2.6S
Input Capacitance (typ)@vds
260@32VpF
Output Capacitance (typ)@vds
69@32VpF
Reverse Capacitance (typ)
2.5@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
37%
Mounting
Screw
Mode Of Operation
2-Tone
Power Dissipation (max)
350000mW
Vswr (max)
3
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF372
Manufacturer:
SAMSUNG
Quantity:
860 000
Part Number:
MRF372
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
MRF372R3 MRF372R5
6
−10
−15
−20
−25
−30
−35
−40
−45
−50
40
35
30
25
20
15
10
5
V
f1 = 857 MHz
f2 = 863 MHz
DD
Figure 7. Intermodulation Distortion versus
= 32 Vdc
V
I
6 dB Peak/Avg. Ratio
DQ
DD
Figure 5. 8 - VSB Performance (860 MHz)
10
= 1600 mA
= 32 Vdc
Note: IMR measured using Delta Marker Method.
I
DQ
P
out
= 400 mA
P
800 mA
out
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) AVG.
10
1.2 A
G
Output Power
ps
TYPICAL TWO - TONE NARROWBAND CHARACTERISTICS
1.6 A
35
30
25
20
15
10
IMR
5
0
V
I
2 K Mode 64 QAM
10 dB Peak/Avg. Ratio
100
DQ
h
DD
Figure 4. COFDM Performance (860 MHz)
= 1600 mA
= 32 Vdc
Note: IMR measured using Delta Marker Method.
G
P
ps
out
, OUTPUT POWER (WATTS) AVG.
100
10
−15
−20
−25
−30
−35
−40
−45
−50
IMR
45
40
35
30
25
20
15
10
20
18
16
14
12
10
5
Figure 8. Drain Efficiency versus Output Power
h
800 mA
I
DQ
1.2 A
V
I
f1 = 857 MHz
f2 = 863 MHz
Figure 6. Power Gain versus Output Power
DQ
DD
= 1600 mA
400 mA
= 800 mA
= 32 Vdc
10
10
P
out
P
out
, OUTPUT POWER (WATTS) PEP
100
, OUTPUT POWER (WATTS) PEP
−15
−20
−25
−30
−35
−40
−45
−50
Freescale Semiconductor
100
100
RF Device Data
V
f1 = 857 MHz
f2 = 863 MHz
DD
= 32 Vdc