SI4830DY-T1 Vishay, SI4830DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4830DY-T1
• Description: MOSFET Small Signal 30V 7.5A 2W
• Manufacturer: Vishay

Specifications of SI4830DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71161
S-31989—Rev. C, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
V
GS
= 10 thru 4 V
0.040
0.032
0.024
0.016
0.008
0.000
10
8
6
4
2
0
20
16
12
0
0
8
4
0
0.0
V
I
D
DS
= 7.5 A
0.5
4
3
On-Resistance vs. Drain Current
= 15 V
V
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
I
1.0
GS
D
- Total Gate Charge (nC)
8
6
- Drain Current (A)
Gate Charge
= 4.5 V
1.5
12
9
2.0
V
16
12
3 V
2 V
GS
2.5
= 10 V
20
15
3.0
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
0
8
4
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 7.5 A
0.5
= 10 V
6
V
GS
T
V
0
C
J
Transfer Characteristics
DS
rss
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
1.0
- Drain-to-Source Voltage (V)
25
Capacitance
12
T
25_C
C
= 125_C
Vishay Siliconix
C
1.5
50
C
oss
iss
18
75
2.0
Si4830DY
100
- 55_C
24
www.vishay.com
MOSFET
2.5
125
150
30
3.0
3