SI4830DY-T1 Vishay, SI4830DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4830DY-T1
• Description: MOSFET Small Signal 30V 7.5A 2W
• Manufacturer: Vishay

Specifications of SI4830DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si4830DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
20
10
0.01
1
- 50
0.0
0.1
2
1
10
-4
- 25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
Single Pulse
V
SD
0
T
T
Threshold Voltage
- Source-to-Drain Voltage (V)
0.4
J
J
= 150_C
- Temperature (_C)
25
10
-3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
100
T
10
J
-2
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.04
0.03
0.02
0.01
0.00
50
40
30
20
10
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
2
-2
10
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
GS
DM
JM
Single Pulse Power
- Gate-to-Source Voltage (V)
10
- T
-1
t
A
Time (sec)
1
4
I
D
= P
t
2
= 7.5 A
DM
Z
1
thJA
thJA
100
t
t
S-31989—Rev. C, 13-Oct-03
1
2
6
(t)
Document Number: 71161
= 93_C/W
10
MOSFET
8
600
100
600
10