74HCT30D-T NXP Semiconductors, 74HCT30D-T Datasheet - Page 2

Gates (AND / NAND / OR / NOR) 8-INPUT NAND GATE

74HCT30D-T

Manufacturer Part Number
74HCT30D-T
Description
Gates (AND / NAND / OR / NOR) 8-INPUT NAND GATE
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74HCT30D-T

Product
NAND
Logic Family
HCT
Number Of Gates
1
Number Of Lines (input / Output)
8 / 1
High Level Output Current
- 6 mA
Low Level Output Current
6 mA
Propagation Delay Time
12 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-108
Minimum Operating Temperature
- 40 C
Lead Free Status / Rohs Status
 Details
Other names
74HCT30D,653
Philips Semiconductors
FEATURES
GENERAL DESCRIPTION
The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT30 provide the 8-input NAND function.
QUICK REFERENEC DATA
GND = 0 V; T
Notes
1. C
2. For HC the condition is V
ORDERING INFORMATION
See
December 1990
t
C
C
PHL
Output capability: standard
I
8-input NAND gate
I
PD
SYMBOL
CC
f
f
C
V
For HCT the condition is V
i
o
“74HC/HCT/HCU/HCMOS Logic Package Information”
/ t
CC
PD
= input frequency in MHz
L
category: SSI
= output frequency in MHz
(C
P
PLH
= output load capacitance in pF
D
= supply voltage in V
is used to determine the dynamic power dissipation (P
L
= C
V
PD
amb
CC
2
propagation delay A, B, C, D, E, F, G, H to Y
input capacitance
power dissipation capacitance per gate
= 25 C; t
V
CC
f
o
) = sum of outputs
2
f
i
r
= t
I
= GND to V
I
f
= GND to V
(C
= 6 ns
PARAMETER
L
V
CC
2
CC
CC
f
o
) where:
1.5 V
2
.
D
in W):
C
notes 1 and 2
L
= 15 pF; V
CONDITIONS
CC
= 5 V
12
3.5
15
Product specification
74HC/HCT30
HC
TYPICAL
12
3.5
15
HCT
ns
pF
pF
UNIT

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