BT137-600E NXP Semiconductors, BT137-600E Datasheet - Page 6

• Manufacturer Part Number: BT137-600E
• Description: Thyristor TRIAC 600V 71A 3-Pin(3+Tab) TO-220AB Tube
• Manufacturer: NXP Semiconductors
• Type: TRIACr

Specifications of BT137-600E

• Package: 3TO-220AB
• Peak On-state Voltage: 1.65@10A V
• Repetitive Peak Off-state Current: 0.5 mA
• Repetitive Peak Reverse Voltage: 600 V
• Maximum Gate Trigger Current: 25 mA
• Maximum Gate Trigger Voltage: 1.5 V
• Maximum Holding Current: 20 mA

NXP Semiconductors
6. Characteristics
Table 6.
BT137-600E
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
GT
L
H
D
gt
T
GT
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
gate-controlled turn-on
time
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
see
V
V
waveform; gate open circuit
I
dI
All information provided in this document is subject to legal disclaimers.
T
TM
j
j
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
D
D
DM
G
= 10 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 12 A; V
Figure 11
Figure 11
= 402 V; T
Rev. 3 — 24 March 2011
j
T
T
T
T
G
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T2- G+;
j
= 0.1 A; T
= 125 °C
= 600 V; I
j
Figure 7
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 8
= 125 °C; exponential
j
= 25 °C;
j
G
= 125 °C;
Figure 10
= 0.1 mA;
Figure 9
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
BT137-600E
Typ
2.5
4
5
11
3
14
3
4
2.5
1.3
0.7
0.4
0.1
50
2
© NXP B.V. 2011. All rights reserved.
Max
10
10
10
25
25
35
25
35
20
1.65
1.5
-
0.5
-
-
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
µs
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