EPC9004 EPC, EPC9004 Datasheet

EPC9004

Manufacturer Part Number

EPC9004

Description

BOARD DEV FOR EPC2012 200V EGAN

Manufacturer

EPC

Series

eGaN™r

Datasheet

1.EPC9004.pdf (5 pages)

Specifications of EPC9004

Mfg Application Notes

Second Generation eGaN® FETs Assembling eGaN® FETS Using eGaN® FETs

Design Resources

EPC9004 Schematic EPC9004 Gerber Files EPC9004 Bill of Materials

Main Purpose

Power Management, Half H-Bridge Driver (External FET)

Embedded

Utilized Ic / Part

EPC2012

Primary Attributes

200V, 3A Max Output GaNFET Capability

Secondary Attributes

GaNFET Driver Circuit Uses 7 ~ 12V

Lead Free Status / Rohs Status

Contains lead / RoHS non-compliant

Other names

917-1013

Current page: 1 of 5
Download datasheet (2Mb)

eGaN® FET DATASHEET

EPC2012 – Enhancement Mode Power Transistor

Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-

ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-

tron mobility and low temperature coefficient allows very low R

and majority carrier diode provide exceptionally low Q

can handle tasks where very high switching frequency, and low on-time are beneficial as well as

those where on-state losses dominate.

All measurements were done with substrate shorted to source.

Note 1: R

Static Characteristics (T

Source-Drain Characteristics (T

Dynamic Characteristics (T

DSS

DS(ON)

, 3 A

STG

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

, 200 V

DS(ON)

GS(TH)

DSS

GSS

is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

OSS

RSS

OSS

, 100 mW

ISS

DSS

θ JC

θ JB

θ JA

Drain-to-Source Voltage

Continuous (T

Pulsed (25˚C, Tpulse = 300 µs)

Gate-to-Source Voltage

Operating Temperature

Storage Temperature

Gate-Source Forward Leakage

Source-Drain Forward Voltage

PARAMETER

Gate-Source Reverse Leakage

PARAMETER

Reverse Transfer Capacitance

Drain-Source On Resistance

Total Gate Charge (V

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

Thermal Resistance, Junction to Ambient (Note 1)

Drain-to-Source Voltage

Gate Threshold Voltage

Gate to Source Charge

Drain Source Leakage

Gate to Drain Charge

= 25˚C unless otherwise stated)

Output Capacitance

Input Capacitance

=25˚C, θ

Output Charge

= 25˚C unless otherwise stated)

= 70)

Maximum Ratings

NEW PRODUCT

= 5 V)

and zero Q

= 0.5 A, V

DS(ON)

Thermal Characteristics

-40 to 125

-40 to 150

TEST CONDITIONS

, while its lateral device structure

200

= 160 V, V

= 100 V, V

= 0 V, I

= 100 V, I

-5

= V

. The end result is a device that

= 5 V, I

= -5 V

, I

= 0 V, T = 125˚C

= 5 V

= 0 V, T = 25˚C

= 60 µA

= 1 mA

= 3 A

= 0 V

˚C

MIN

200

0.7

EFFICIENT POWER CONVERSION

EPC2012 eGaN® FETs are supplied only in

passivated die form with solder bars

Applications

• High Speed DC-DC conversion

• Class D Audio

• Hard Switched and High Frequency Circuits

Benefits

• Ultra High Efficiency

• Ultra Low R

• Ultra low Q

• Ultra small footprint

0.57

0.33

128

TYP

0.2

0.1

1.4

3.3

1.5

1.9

TYP

8.2

DS(on)

MAX

100

MAX

145

0.41

0.75

0.5

2.5

4.4

1.8

HAL

˚C/W

EPC2012

| PAGE 1

UNIT

µA

Related parts for EPC9004

EPC9004 Summary of contents

Page 1

... JA G θ See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. Q Gate to Drain Charge GD Q Gate to Source Charge EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | GS Q Output Charge OSS NEW PRODUCT , while its lateral device structure DS(ON) and zero Q . The end result is a device that ...

Page 2

... Drain to Source Voltage (V) DS Figure 3: R vs. V for Various Drain Currents DS(ON) GS 200 150 100 2 – Gate to Source Voltage (V) GS EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | 0 125˚ TEST CONDITIONS V = 100 100 1 4.5 5 5.5 2 MIN TYP MAX 128 ...

Page 3

... V – Source to Drain Voltage (V) SD Figure 9: Normalized Threshold Voltage vs. Temperature - – Junction Temperature ( ˚ All measurements were done with substrate shortened to source. EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Figure 6: Gate Charge OSS ISS RSS ...

Page 4

... Dimension (mm) c (note 2) f (note 2) DIE MARKINGS Die orientation dot Gate Pad solder bar is under this corner EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Normalized Maximum Transient Thermal Impedance Single Pulse Rectangular Pulse Duration, seconds ...

Page 5

... Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any productor circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ...

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