MCH6613-TL-E ON Semiconductor, MCH6613-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH6613-TL-E
• Description: MOSFET N/P-CH 30V 350MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6613-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 350mA, 200mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.58nC @ 10V
• Input Capacitance (ciss) @ Vds: 7pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm
7022A-006
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
6
1
6
1
Parameter
0.65
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0 to 0.02
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
t d (on)
t d (off)
t d (on)
t d (off)
I DSS
I GSS
Coss
V SD
Ciss
Crss
V SD
Qgs
Qgd
Qgs
Qgd
Qg
yfs
Qg
t r
t f
t r
t f
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =150mA
V DS =10V, V GS =10V, I D =150mA
V DS =10V, V GS =10V, I D =150mA
I S =150mA, V GS =0V
I D =- -1mA, V GS =0V
V DS =--30V, V GS =0V
V GS = 8V, V DS =0V
V DS =--10V, I D =--100 A
V DS =--10V, I D =--50mA
I D =- -50mA, V GS =- -4V
I D =- -30mA, V GS =- -2.5V
I D =- -1mA, V GS =--1.5V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -10V, I D =--100mA
V DS =--10V, V GS =- -10V, I D =--100mA
V DS =--10V, V GS =- -10V, I D =--100mA
I S =--100mA, V GS =0V
MCH6613
Electrical Connection
Conditions
6
1
5
2
4
3
min
--0.4
--30
80
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
Ratings
typ
--0.83
1.58
0.26
0.31
0.87
1.43
0.18
0.25
155
120
120
130
110
7.5
5.7
1.8
19
65
27
24
55
11
8
max
10.4
15.4
--1.4
--1.2
1.2
10
54
--1
No.6920-2/7
Unit
mS
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
A
A