MCH6613-TL-E ON Semiconductor, MCH6613-TL-E Datasheet - Page 6

• Manufacturer Part Number: MCH6613-TL-E
• Description: MOSFET N/P-CH 30V 350MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6613-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 350mA, 200mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.58nC @ 10V
• Input Capacitance (ciss) @ Vds: 7pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
1.0
0.1
1.0
0.8
0.6
0.4
0.2
10
0
9
8
7
6
5
4
3
2
1
0
3
2
7
5
3
2
7
5
3
2
1.0
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS =10V
I D =150mA
Operation in
this area is
limited by R DS (on).
0.2
20
2
Drain-to-Source Voltage, V DS -- V
Ambient Temperature, Ta -- C
0.4
40
Total Gate Charge, Qg -- nC
3
0.6
60
V GS -- Qg
P D -- Ta
5
A S O
0.8
80
7
10
100
1.0
2
0.8mm)1unit
120
1.2
2
PW 10 s
[Pch, Nch]
140
1.4
3
IT00040
IT02877
IT02879
[Nch]
[Nch]
160
1.6
MCH6613
5
--0.01
--1.0
--0.1
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
--1.0
7
5
3
2
7
5
3
2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS = --10V
I D = --100mA
I DP = --0.8A
Operation in this
area is limited by R DS (on).
I D = --0.2A
0.2
2
Drain-to-Source Voltage, V DS -- V
0.4
Total Gate Charge, Qg -- nC
3
0.6
V GS -- Qg
5
A S O
0.8
7
--10
1.0
2
0.8mm)1unit
1.2
2
No.6920-6/7
1.4
3
PW 10 s
IT00088
IT02878
[Pch]
[Pch]
1.6
5