FW282-TL-E ON Semiconductor, FW282-TL-E Datasheet

FW282-TL-E

Manufacturer Part Number

FW282-TL-E

Description

MOSFET N-CH DUAL 35V 6A 8SOP

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.FW282-TL-E.pdf (4 pages)

Specifications of FW282-TL-E

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

37 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

35V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

Gate Charge (qg) @ Vgs

10nC @ 10V

Input Capacitance (ciss) @ Vds

470pF @ 20V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FW282-TL-E

Manufacturer:

ON Semiconductor

Quantity:

800

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Ordering number : ENA1549

FW282

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : W282

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10s)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

4V drive.

Composite type, facilitating high-density mounting.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V DSS

V (BR)DSS

I DSS

I GSS

V GS (off)

| yfs |

R DS (on)1

R DS (on)2

R DS (on)3

V GSS

I D

I DP

P D

P T

Tch

Tstg

Symbol

www.semiconductor-sanyo.com/network

SANYO Semiconductors

Duty cycle≤1%

When mounted on ceramic substrate (2000mm

I D =1mA, V GS =0V

V DS =35V, V GS =0V

V GS =±16V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =6A

I D =6A, V GS =10V

I D =3A, V GS =4.5V

I D =3A, V GS =4V

FW282

Conditions

×0.8mm) 1unit, PW≤10s

×0.8mm), PW≤10s

90209PA TK IM TC-00002093

DATA SHEET

min

1.5

1.8

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

±20

±10

150

6.5

1.8

2.2

2.6

No. A1549-1/4

Unit

mΩ

°C

μA

Related parts for FW282-TL-E

FW282-TL-E Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. FW282 SANYO Semiconductors Symbol Conditions ...

Page 2

... See speciﬁ ed Test Circuit See speciﬁ ed Test Circuit =20V =10V =6A Qgs V DS =20V =10V =6A Qgd V DS =20V =10V = =6A =0V Electrical Connection 0.2 0 Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 V OUT FW282 Ratings Unit min typ max 470 ...

Page 3

... Gate-to-Source Voltage =10V 0.001 0.01 0.1 Drain Current Time -- I D 100 0.1 1.0 Drain Current FW282 =10V Ta=25° 0.8 0.9 1.0 0 0.5 IT14971 100 Ta=25° --60 --40 --20 IT14973 0.001 1.0 10 IT14975 1000 V DD =20V =10V 100 ...

Page 4

... Ambient Temperature °C Note on usage : Since the FW282 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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