FW282-TL-E ON Semiconductor, FW282-TL-E Datasheet - Page 2

• Manufacturer Part Number: FW282-TL-E
• Description: MOSFET N-CH DUAL 35V 6A 8SOP
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of FW282-TL-E

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 20V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7005A-003
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
Parameter
V IN
1
8
G
50Ω
1.27
5.0
V DD =20V
D
5
S
4
0.43
I D =6A
R L =3Ω
FW282
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
0.2
V OUT
0.1
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =20V, V GS =10V, I D =6A
V DS =20V, V GS =10V, I D =6A
V DS =20V, V GS =10V, I D =6A
I S =6A, V GS =0V
FW282
Conditions
Electrical Connection
8
1
7
2
min
6
3
Ratings
typ
5
4
0.84
470
70
35
34
31
30
10
8
2
2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
max
1.2
No. A1549-2/4
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V