FW282-TL-E ON Semiconductor, FW282-TL-E Datasheet - Page 2
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FW282-TL-E
Manufacturer Part Number
FW282-TL-E
Description
MOSFET N-CH DUAL 35V 6A 8SOP
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.FW282-TL-E.pdf
(4 pages)
Specifications of FW282-TL-E
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
37 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
470pF @ 20V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FW282-TL-E
Manufacturer:
ON Semiconductor
Quantity:
800
Continued from preceding page.
Package Dimensions
unit : mm (typ)
7005A-003
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
Parameter
V IN
1
8
G
50Ω
1.27
5.0
V DD =20V
D
5
S
4
0.43
I D =6A
R L =3Ω
FW282
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
0.2
V OUT
0.1
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =20V, V GS =10V, I D =6A
V DS =20V, V GS =10V, I D =6A
V DS =20V, V GS =10V, I D =6A
I S =6A, V GS =0V
FW282
Conditions
Electrical Connection
8
1
7
2
min
6
3
Ratings
typ
5
4
0.84
470
70
35
34
31
30
10
8
2
2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
max
1.2
No. A1549-2/4
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V