SI3220-G-GQ Silicon Laboratories Inc, SI3220-G-GQ Datasheet - Page 15
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SI3220-G-GQ
Manufacturer Part Number
SI3220-G-GQ
Description
IC PROSLIC/CODEC DUAL 64TQFP
Manufacturer
Silicon Laboratories Inc
Series
ProSLIC®r
Datasheet
1.SI3200-G-FSR.pdf
(112 pages)
Specifications of SI3220-G-GQ
Package / Case
64-TQFP, 64-VQFP
Function
Subscriber Line Interface Concept (SLIC), CODEC
Interface
GCI, PCM, SPI
Number Of Circuits
2
Voltage - Supply
3.3V, 5V
Current - Supply
65mA
Power (watts)
941mW
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Includes
Battery Switching, BORSCHT Functions, DTMF Generation and Decoding, FSK Tone Generation, Modem and Fax Tone Detection
Product
SLIC
Supply Voltage (min)
3.13 V
Supply Current
22 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Channels
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3220-G-GQ
Manufacturer:
CREATIVE
Quantity:
99
Company:
Part Number:
SI3220-G-GQ
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Company:
Part Number:
SI3220-G-GQR
Manufacturer:
SILICON
Quantity:
15 000
Company:
Part Number:
SI3220-G-GQR
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
Table 9. DC Characteristics (V
(V
Table 8. Si3200/2 Characteristics
(V
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU Internal
Pullup Resistance
Relay Driver Source
Impedance
Relay Driver Sink
Impedance
Input Leakage Current
Parameter
TIP/RING Pulldown Transistor Satura-
tion Voltage
TIP/RING Pullup Transistor
Saturation Voltage
Battery Switch Saturation
Impedance
OPEN State TIP/RING Leakage Current
Internal Blocking Diode Forward Voltage
Notes:
DD
DD
1. V
2. I
, V
=
DD1
3.13 to 5.25 V, T
OUT
AC
– V
=
= 60 mA.
DD4
2.5 V
=
PK
4.75 to 5.25 V, T
, R
A
LOAD
=
Symbol
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
R
V
V
R
V
V
=
OUT
I
OH
OL
IH
L
IL
IN
600 Ω.
A
DD
=
GPOa/b, TRD1a/b,TRD2a/b:
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
, V
DTX, SDO, INT, SDITHRU:
DD1
BATSELa/b, RRDa/b,
V
V
DD1
DD1
Symbol
Test Condition
R
–V
V
V
I
LKG
I
V
SAT
I
O
I
I
CM
OV
–V
–V
I
O
O
O
F
O
DD4
= –40 mA
= –8 mA
< 28 mA
< 85 mA
DD4
DD4
= 8 mA
=
I
(V
= 4.75 V
= 4.75 V
Rev. 1.3
LIM
5 V)
BAT
GND – V
V
V
GND – V
V
RING
= 22 mA, I
TIP
BAT
– V
I
Test Condition
ABIAS
I
I
I
– V
LIM
LIM
LIM
– V
– V
BATH
R
RING
BAT
L
= 22 mA
= 45 mA
= 45 mA,
TIP
BATL
BAT
= 16 mA
= 0 Ω
)/I
ABIAS
Si3220/25 Si3200/02
(Reverse)
(Forward)
OUT
(Forward)
(Reverse)
(Note 2)
0.7 x
V
DD
Min
1
1
= 4 mA
20
(Note 2)
—
—
—
—
—
—
1
– 0.6
V
DD
1
Typ
Min
30
63
—
—
—
—
—
11
—
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
0.8
15
⎯
3
3
4
4
0.3 x
Max
5.25
0.72
±10
0.4
—
—
—
—
Max
100
V
⎯
—
⎯
—
⎯
⎯
DD
Unit
Unit
µA
kΩ
µA
Ω
V
V
V
V
V
V
V
V
V
V
Ω
Ω
15