SI3226-A-GQR Silicon Laboratories Inc, SI3226-A-GQR Datasheet - Page 4
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SI3226-A-GQR
Manufacturer Part Number
SI3226-A-GQR
Description
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI3226-A-GQR.pdf
(38 pages)
Specifications of SI3226-A-GQR
Lead Free Status / Rohs Status
Supplier Unconfirmed
Si3208/9
1. Electrical Specifications
Table 1. Absolute Maximum Ratings and Thermal Information
4
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Typical
TQFP-64
Continuous Power Dissipation
TQFP-64
Thermal Resistance, Typical
QFN-40
Continuous Power Dissipation
QFN-40
Supply Voltage
Digital Input Voltage
Supply Voltage
Battery Supply Voltage
TIP, RING Current
Supply Voltage
High Battery Supply Voltage
TIP, RING Current
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
2. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout
3. Operation of the Si3226 or Si3227 above 125 °C junction temperature may degrade device reliability.
4. Si3208 and Si3209 are equipped with on-chip thermal limiting circuitry that shuts down the circuit when the junction
5. The dv/dt of the voltage applied to the VBAT pins must be limited to 10 V/µs.
restricted to the conditions as specified in the operational sections of this data sheet.
guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an exposed
copper surface of at least equal size and that multiple vias are added to enable heat transfer between the top-side
copper surface and a large internal/bottom copper plane.
temperature exceeds the thermal shutdown threshold. The thermal shutdown threshold should normally be set to 145
°C; when in the ringing state the thermal shutdown may be set to 200 °C. For optimal reliability long term operation of
the Si3208/Si3209 above 150 °C junction temperature should be avoided.
Parameter
5
5
2
2
3
4
V
I
I
DD1 –
Symbol
TIP
TIP
T
V
V
V
V
V
θ
θ
, I
, I
P
P
Preliminary Rev. 0.33
T
STG
BAT
BAT
IND
DD
DD
JA
JA
A
D
D
RING
RING
V
DD4
Si3226/7
Si3208
Si3209
Test Condition
Pulse < 10 µs
Pulse < 10 µs
Continuous
Continuous
T
T
A
A
= 85 °C
= 85 °C
1
+0.4 to –110
+0.4 to –118
+0.4 to –135
+0.4 to –143
–55 to 150
–0.5 to 4.0
–0.3 to 3.6
–0.5 to 4.0
–0.5 to 4.0
–40 to 85
Value
±100
±100
1.6
1.7
25
32
°C/W
°C/W
Unit
mA
mA
°C
°C
W
W
V
V
V
V
V
V
V
V