7MBR25NE120 Fuji Electric holdings CO.,Ltd, 7MBR25NE120 Datasheet

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7MBR25NE120

Manufacturer Part Number
7MBR25NE120
Description
IGBT (1200V/25A/PIM)
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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7MBR25NE120
IGBT MODULE
1200V / 25A / PIM
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Item
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
*
1
Recommendable value : 1.3 to 1.7 N·m (M4)
Absolute maximum ratings (Tc=25°C unless without specified)
Features
Applications
Maximum ratings and characteristics
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t
(Non-Repetitive)
V
V
I
I
-I
P
V
V
I
I
P
I
I
V
V
I
I
T
T
V
Symbol
C
CP
C
CP
F(AV)
FSM
O
FSM
C
j
stg
CES
GES
C
CES
GES
C
RRM
RSM
iso
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
Condition
AC : 1 minute
Ra ting
-40 to +125
AC 2500
1200
1200
1200
1600
1700
+150
±20
200
±20
120
320
512
25
50
25
15
30
50
25
1
1.7 *
1
IGBT Modules
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m

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7MBR25NE120 Summary of contents

Page 1

... IGBT MODULE 1200V / 25A / PIM Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25° ...

Page 2

... =25A F I RRM V =1600V R Symbol Condition Inverter IGBT Inverter FRD Rth(j-c) Brake IGBT Converter Diode With thermal compound Rth(c-f) * NLU (Over current Limiting circuit) 7MBR25NE120 Characteristics Unit Min. Typ. Max. mA 1.0 µA 20 4.5 V 7.5 V 3.3 V 3.0 4000 pF µs 1.2 µs 0.6 µ ...

Page 3

... Vcc=600V, RG=51 ohm, VGE=±15V, Tj=25°C 1000 100 Collector current : Ic [ 1000 100 7MBR25NE120 Collector current vs. Collector-Emitter voltage Tj=125° Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=125° Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=51 ohm, VGE=±15V, Tj=125° Collector current : Ic [ ...

Page 4

... Dynamic input characteristics Tj=25°C 100 200 300 400 Gate charge : Qg [nC] Reverse recovery characteristics trr, Irr, vs Forward current : IF [A] Reversed biased safe operating area > < < +VGE=15V, -VGE = 15V 125° ohm ...

Page 5

... IGBT Module Switching loss vs. Collector current Vcc=600V, RG=51 ohm, VGE=±15V Collector current : Ic [A] Converter Diode Forward current vs. Forward voltage 0.5 1.0 Forward voltage : 1.5 2.0 7MBR25NE120 Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : VCE [ ...

Page 6

... Vcc=600V, RG=82 ohm, VGE=±15V, Tj=25°C 1000 100 Collector current : Ic [ 1000 100 7MBR25NE120 Collector current vs. Collector-Emitter voltage Tj=125° Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=125° Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V, Tj=125° Collector current : Ic [ ...

Page 7

... Capacitance vs. Collector-Emitter voltage Tj=25° 0 Collector-Emitter voltage : VCE [V] 1000 800 600 400 200 0 < > 800 1000 1200 7MBR25NE120 Dynamic input characteristics Tj=25° 100 150 200 Gate charge : Qg [nC] Switching loss vs. Collector current Vcc=600V, RG=82 ohm, VGE=±15V Collector current : Ic [ 250 300 25 30 ...

Page 8

... IGBT Module Outline Drawings, mm 7MBR25NE120 ...

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