APT50M60JN Advanced Power Technology, APT50M60JN Datasheet

APT50M60JN

Manufacturer Part Number

APT50M60JN

Description

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Manufacturer

Advanced Power Technology

Datasheet

1.APT50M60JN.pdf (4 pages)

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Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT50M60JN

Manufacturer:

APT

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT50M60JN

Manufacturer:

APT

Quantity:

300

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N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

USA

405 S.W. Columbia Street

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

POWER MOS IV

Symbol

(ON)

DSS

GSS

DSS

, l

(ON)

DSS

(TH)

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage

Characteristic

Junction to Case

Case to Sink

> I

= 0V, I

= 10V, 0.5 I

(ON) x R

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

= 250 A)

ISOTOP

[Cont.])

(ON) Max, V

and Inductive Current Clamped

= 25 C

= V

= 25 C

= 10V)

Bend, Oregon 97702 -1035

F-33700 Merignac - France

= 30V, V

, I

= V

= 0.8 V

= 5.0mA)

APT50M60JN 500V 71A 0.06O

DSS

, V

DSS

SINGLE DIE ISOTOP

, V

= 0V)

= 0V, T

All Ratings: T

APT50M60JN

"UL Recognized" File No. E145592 (S)

= 125 C)

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

= 25 C unless otherwise specified.

MIN

500

-55 to 150

0.05

5.52

TYP

690

300

50M60JN

PACKAGE

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

APT

500

284

0.060

1000

MAX

0.18

250

100

Ohms

Amps

Watts

Amps

UNIT

W/ C

UNIT

Volts

UNIT

C/W

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APT50M60JN Summary of contents

Page 1

... High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) CS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord APT50M60JN 500V 71A 0.06O "UL Recognized" File No. E145592 (S) ® SINGLE DIE ISOTOP All Ratings ...

Page 2

... [Cont.], dl /dt = 100A (Measured From Drain Terminal to Center of Die.) (Measured From Source Terminals to Source Bond Pads 1MHz RECTANGULAR PULSE DURATION (SECONDS) APT50M60JN MIN TYP MAX 11640 14000 2230 3120 800 1200 475 710 68 100 DSS 246 370 ...

Page 3

... APT50M60JN 200 V GS =8, 10 & 15V 160 120 80 5. 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - + > (ON (ON)MAX +125 C 250 SEC. PULSE TEST 80 @ <0.5 % DUTY CYCLE +125 - + GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 125 ...

Page 4

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT50M60JN C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+ =-55 C 0.4 0.8 1 ...

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