BSM111AR Siemens Semiconductor Group, BSM111AR Datasheet

BSM111AR

Manufacturer Part Number

BSM111AR

Description

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

Manufacturer

Siemens Semiconductor Group

Datasheet

1.BSM111AR.pdf (9 pages)

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SIMOPAC

Type

BSM 111 AR

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage,

Gate-source voltage

Continuous drain current,

Pulsed drain current,

Operating and storage temperature range

Power dissipation,

Thermal resistance

Chip-case

Insulation test voltage

Creepage distance, drain-source

Clearance, drain-source

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Semiconductor Group

DS(on)

Power module

Single switch

N channel

Enhancement mode

Package with insulated metal base plate

Package outline/Circuit diagram: 1

See chapter Package Outline and Circuit Diagrams.

Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with

DIN 50 014, IEC 146, para. 492.1.

= 100 V

= 200 A

= 8.5 m

Module

= 25 ˚C

= 20 k

= 25 ˚C

Ordering Code

C67076-S1013-A2

= 1 min.

= 25 ˚C

Symbol

–

D puls

DGR

tot

thJC

stg

Values

100

200

600

– 55 … + 150

700

2500

55/150/56

0.18

BSM 111 AR

Unit

˚C

K/W

–

03.96

Related parts for BSM111AR

BSM111AR Summary of contents

Page 1

SIMOPAC Module V = 100 200 8.5 m DS(on) Power module Single switch N channel Enhancement mode Package with insulated metal base plate Package outline/Circuit diagram: 1 Type Ordering Code BSM ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ ˚C, unless otherwise specified. j Parameter Reverse diode Continuous reverse drain current ˚C C Pulsed reverse drain current ˚C C Diode forward on-voltage 400 ...

Page 4

T Characteristics ˚C, unless otherwise specified Power dissipation = ( tot T parameter: = 150 ˚ Safe operating area = ( D T parameter: single pulse ˚C ...

Page 5

Continuous drain-source current parameter 150 ˚ Drain source on-state resistance DS(on) j parameter 130 ...

Page 6

Forward characteristics of reverse diode parameter (spread Semiconductor Group 29 BSM 111 AR ...

Page 7

Transient thermal impedance parameter Typ. gate charge parameter: = 300 A Dputs Semiconductor Group thJC p ) Gate 30 BSM 111 AR ...

Page 8

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Page 9

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