HN58C65P-25 HITACHI, HN58C65P-25 Datasheet
HN58C65P-25
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HN58C65P-25 Summary of contents
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... Reliable CMOS with MNOS cell technology 5 • 10 erase/write cycles (in page mode) • 10 year data retention Ordering Information Type No. Access Time HN58C65P-25 250 ns HN58C65FP-25 250 ns Note added to the end of the type no. for a SOP of 3.0 mm (max) thickness. HN58C65 Series ROM Package 600 mil 28 pin plastic DIP (DP-28) ...
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... HN58C65 Series Pin Arrangement Pin Description Pin Name A0 – A12 I/O1 – I/ RDY/Busy HN58C65P/FP Series RDY/Busy 1 28 A12 (Top View) Function Address input Data input/output Output enable Chip enable Write enable Power (+5 V) Ground No connection Ready/Busy A11 OE A10 CE I/O7 I/O6 ...
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Block Diagram V CC High Voltage Generator Control Logic and Timing Address Buffer and Latch A5 A12 Mode Selection CE OE Pin Mode Read Standby ...
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HN58C65 Series Absolute Maximum Ratings Parameter *1 Supply voltage *1 Input voltage *3 Operating temperature range Storage temperature range Notes: 1. With respect –3.0 V for pulse width 3. Including electrical characteristics and data retention. Recommended ...
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DC Characteristics ( + Parameter Symbol Input leakage current I LI Output leakage current current (Standby CC1 V current (Active CC2 Input low voltage V IL Input high ...
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HN58C65 Series Read Cycle Parameter Symbol Address to output delay t ACC CE to output delay output delay t OE Address to output hold t OH OE, CE high to output float * Note: ...
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Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time OE hold ...
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HN58C65 Series Byte Write Timing Waveform (1) (WE Controlled) Address Din RDY/Busy OES t DS High OEH ...
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Byte Write Timing Waveform (2) (CE Controlled) Address Din High-Z RDY/Busy OES HN58C65 Series OEH ...
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HN58C65 Series Page Write Timing Waveform (1) (WE Controlled) Address A5 to A12 Address OES Din High-Z ...
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Page Write Timing Waveform (2) (CE Controlled) Address A5 to A12 Address OES Din High-Z RDY/Busy t BLC t DL ...
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HN58C65 Series Data Polling Timing Waveform Address Din X I/O7 Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single ...
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WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge and data is latched by the rising edge CE. Write/Erase Endurance and Data Retention Time 5 The endurance ...
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HN58C65 Series 2. Data Protection at V On/Off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc.) may act trigger and turn the EEPROM to program mode ...
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... Package Dimensions HN58C65P series (DP-28) 35.60 36.50 Max 28 1 1.20 1.90 Max 2.54 ± 0.25 HN58C65FP Series (FP-28D) 18.30 18.75 Max 28 1 1.12 Max 1. 0.48 ± 0. 0.10 0.40 – 0.05 0.20 M 0.15 15 HN58C65 Series Unit: mm 15.24 + 0.11 0.25 – 0.05 0° – 15° ...
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HN58C65 Series HN58C65FP Series (FP-28DA) 18.00 18.75 Max 28 1 1.27 Max 1.27 ± 0. 0.10 0.40 – 0.05 16 Unit: mm 11.80 ± 0.30 1.70 0 – 10 ° 1.00 ± 0.20 ...