2SK3155 Renesas Electronics Corporation., 2SK3155 Datasheet
2SK3155
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2SK3155 Summary of contents
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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...
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... Features Low on-resistance R = 100 m typ. DS High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM G 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Feb. 1999 1. Gate 2. Drain 3. Source ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = Symbol Ratings V 150 DSS ...
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... DS(on) | 8.5 14 — fs — 850 — — 300 — — 160 — — 13 — — 100 — — 195 — — 110 — — 0.9 — DF — 140 — Unit Test Conditions mA 100 150 mA MHz 3. diF 2SK3155 = Note4 Note4 Note4 = ...
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... Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics Drain to Source Voltage 500 200 100 0.5 0.2 0.1 0.05 150 200 0.1 0.3 Tc (°C) 20 Pulse Test (V) DS Maximum Safe Operation Area Operation in this area is limited by R DS(on 25° ...
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... 0.1 0.3 (V) GS Forward Transfer Admittance vs. 1000 300 Tc = –25 °C 100 0.3 0.1 120 160 0.1 0.2 (°C) 2SK3155 vs. Drain Current Pulse Test 100 Drain Current I (A) D Drain Current 25 °C 75 ° Pulse Test 100 2 0.5 1 Drain Current I ...
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... Body–Drain Diode Reverse Recovery Time 500 µ 200 100 0.1 0.2 0.5 1 Reverse Drain Current Dynamic Input Characteristics 200 I = 15A D 160 V = 100 120 100 Gate Charge 10000 = °C 3000 1000 300 100 (A) DR 1000 20 500 200 12 100 100 Qg (nc) Typical Capacitance vs ...
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... Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin – Pulse Test 0 1 Monitor 2SK3155 Maximun Avalanche Energy vs. Channel Temperature Derating duty < 0 > 100 125 Channel Temperature Tch (°C) Avalanche Waveform V DSS 1 2 • L • I • – DSS DD V (BR)DSS 150 ...
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... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor Vin Pulse Width PW (S) Vout Monitor D.U. td(on 25°C ch – c( (t) • ch – – 4.17°C/ 25° 100 m 1 Waveform ...
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... Hitachi Code JEDEC EIAJ Mass (reference value) 2SK3155 As of January, 2001 2.8 0.2 Unit: mm 2.5 0.2 0.1 TO-220FM — Conforms 1.8 g ...
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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...