MAX9791AETI+T Maxim Integrated Products, MAX9791AETI+T Datasheet - Page 2

• Manufacturer Part Number: MAX9791AETI+T
• Description: IC AMP AUDIO 2.2W STER D 28TQFN
• Manufacturer: Maxim Integrated Products
• Series: DirectDrive™r
• Type: Class Dr

Specifications of MAX9791AETI+T

• Output Type: 2-Channel (Stereo) with Stereo Headphones and Subwoofer
• Max Output Power X Channels @ Load: 2.2W x 2 @ 4 Ohm; 180mW x 2 @ 32 Ohm
• Voltage - Supply: 4.5 V ~ 5.5 V
• Features: Depop, LDO, Short-Circuit and Thermal Protection, Shutdown
• Mounting Type: Surface Mount
• Package / Case: 28-TQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Windows Vista-Compliant Class D Speaker
Amplifiers with DirectDrive Headphone Amplifiers
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
GND to PGND, CPGND ......................................................±0.3V
CPVSS, C1N to GND ............................................-6.0V to + 0.3V
HPL, HPR to CPVSS ...........................................-0.3V to lower of
HPL, HPR to HPVDD..................................+0.3V to the higher of
COM, SENSE........................................................-0.3V to + 0.3V
Any Other Pin ..........................................-0.3V to (AVDD + 0.3V)
Duration of Short Circuit between OUT_+, OUT_- and GND,
Duration of Short Circuit between LDO_OUT and AVDD,
Duration of Short Circuit between HPR, HPL and
Continuous Current (PVDD, OUT_+, OUT_-, PGND)............1.7A
Continuous Current (C1N, C1P, CPVSS, AVDD, HPVDD,
ELECTRICAL CHARACTERISTICS
(V
C1 = C2 = 1µF. R
C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
Note 1: If short is present at power-up.
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
GENERAL
Supply Voltage
Headphone Supply Voltage
Undervoltage Lockout
Quiescent Current
Shutdown Current
Bias Voltage
IN2
AVDD
(AVDD, PVDD, HPVDD to GND)........................-0.3V to +6.0V
(AVDD to PVDD) .............................................................±0.3V
PGND, AVDD, or PVDD..........................................Continuous
GND (Note 1) .........................................................Continuous
GND .......................................................................Continuous
LDO_OUT, HPR, HPL) ..................................................850mA
_______________________________________________________________________________________
= C
= V
board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
COM
PARAMETER
PVDD
= 1µF, T
= V
L
= ∞, unless otherwise specified. R
HPVDD
A
= T
MIN
= 5V, V
(HPVDD - CPVSS + 0.3V) and +9V
(CPVSS - HPVDD - 0.3V) and -9V
to T
MAX
GND
SYMBOL
I
V
V
I
AVDD
I
V
, unless otherwise noted. Typical values are at T
UVLO
HPVDD
I
V
HPVDD
PVD
AVDD
SHDN
PVDD
BIAS
= V
+
+
,
PGND
Guaranteed by PSRR test (Note 4)
Guaranteed by PSRR test
SPKR_EN = 1.8V
HP_INR, HP_INL, SPKR_INR, SPKR_INL
MAX9791
MAX9792
= V
CPGND
IN1
= 20kΩ (A
SPKR_EN
= 0, I
CONDITIONS
1
1
0
0
1
1
0
0
LDO_OUT
Continuous Input Current (All Other Pins) ........................±20mA
Continuous Power Dissipation (T
ESD Protection, Human Body Model ...................................±2kV
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
VSPKR
28-Pin Thin QFN Single-Layer Board (derate 20.8mW/°C
Junction-to-Ambient Thermal Resistance (θ
Junction-to-Case Thermal Resistance (θ
28-Pin Thin QFN Multilayer Board (derate 28.6mW/°C
Junction-to-Ambient Thermal Resistance (θ
Junction-to-Case Thermal Resistance (θ
above +70°C)..........................................................1667mW
(Note 2) .....................................................................40°C/W
(Note 2) ....................................................................2.7°C/W
above +70°C)..........................................................2286mW
(Note 2) .....................................................................35°C/W
(Note 2) ....................................................................2.7°C/W
HP_EN
= 12dB), R
0
1
0
1
0
1
0
1
= 0, C
LDO_EN
LDO
A
IN2
1
0
0
0
1
0
0
0
= +25°C.) (Note 3)
= 2µF (C
= 40.2kΩ (A
MIN
2.7
2.7
LDO
A
= +70°C)
= 4µF for 1.8V LDO option),
VHP
TYP
10.5
14.4
10.5
14.4
250
250
4.4
4.4
3.3
0
= 0dB), C
JC
JC
)
)
JA
JA
MAX
2.65
400
400
7..3
5.5
5.5
15
21
18
24
)
)
6
6
IN1
= 470nF,
UNITS
mA
mA
µA
µA
µA
V
V
V
V