HM62W16256BLTT-5 HITACHI, HM62W16256BLTT-5 Datasheet
![no-image](/images/manufacturer_photos/0/3/301/hitachi_sml.jpg)
HM62W16256BLTT-5
Related parts for HM62W16256BLTT-5
HM62W16256BLTT-5 Summary of contents
Page 1
... HM62W16256B Series 4 M SRAM (256-kword Description The Hitachi HM62W16256B Series is 4-Mbit static RAM organized 262,144-word Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore suitable for battery backup systems ...
Page 2
... HM62W16256B Series Ordering Information Type No. Access time HM62W16256BLTT HM62W16256BLTT HM62W16256BLTT-5SL 55 ns HM62W16256BLTT-7SL Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB) ...
Page 3
Pin Arrangement Pin Description Pin name Function A0 to A17 Address input I/O0 to I/O15 Data input/output CS1 Chip select 1 CS2 Chip select 2 WE Write enable OE Output enable LB Lower byte select UB Upper byte select V ...
Page 4
HM62W16256B Series Block Diagram LSB A4 A3 A15 A14 A16 A1 A2 A17 A0 MSB A13 I/O0 I/O15 CS2 CS1 • • • Memory matrix Row • • 2,048 x 2,048 decoder • Column I/O ...
Page 5
Operation Table CS1 WE OE CS2 Note ...
Page 6
HM62W16256B Series DC Characteristics Parameter Symbol Min Input leakage current |I Output leakage current |I Operating current I Average HM62W16256B-5 I operating current HM62W16256B Standby current I Standby current I I Output high voltage V Output low voltage ...
Page 7
AC Characteristics ( + Test Conditions • Input pulse levels 0 • Input rise and fall time • Input timing reference levels: 1.4 V • Output timing reference ...
Page 8
HM62W16256B Series Write Cycle Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB, UB valid to end of write Address setup time Write recovery time Data to write time ...
Page 9
Timing Waveform Read Cycle Address CS1 CS2 LB High impedance Dout t RC Valid address ACS1 CLZ1 t ACS2 CLZ2 BLZ ...
Page 10
HM62W16256B Series Write Cycle (1) (WE Clock) Address CS1 CS2 LB Din Dout Valid address WHZ * 7 ...
Page 11
Write Cycle (2) (CS Clock Address CS1 CS2 LB Din Dout ) Valid address High impedance HM62W16256B Series 7 5 ...
Page 12
HM62W16256B Series Write Cycle (3) (LB, UB Clock Address CS1 CS2 LB Din Dout Valid address ...
Page 13
Low V Data Retention Characteristics ( + Parameter Symbol V for data retention V CC Data retention current I I Chip deselect to data t retention time Operation recovery time t Notes: 1. This characteristic ...
Page 14
HM62W16256B Series Low V Data Retention Timing Waveform (1) (CS1 Controlled CDR 2.0 V CS1 0 V Low V Data Retention Timing Waveform (2) (CS2 Controlled CDR V CC 3.0 ...
Page 15
... Package Dimensions HM62W16256BLTT Series (TTP-44DB) 18.41 18.81 Max 44 1 0.80 *0.30 0.10 0.13 0.25 0.05 1.005 Max 0.10 *Dimension including the plating thickness Base material dimension 11.76 Hitachi Code JEDEC EIAJ Weight (reference value) HM62W16256B Series 0.80 0.20 0 – 5 0.50 0.10 TTP-44DB — ...
Page 16
... Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics ...