IW4511BD IK Semiconductor, IW4511BD Datasheet
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IW4511BD
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IW4511BD Summary of contents
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... STROBE PIN ASSIGNMENT С TECHNICAL DATA IW4511B N SUFFIX Plastic DIP D SUFFIX SOIC ORDERING INFORMATION IW4511BN Plastic DIP IW4511BD SOIC 125 °C for all packages A Rev. 00 ...
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Inputs ...
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... Power dissipation per D package P Power Dissipation per tot Output Transistor for IW4511BN for temperature range - 55 - +100 °С and for ICs IW4511BD for temperature *P D range - 55 - +65 °С P for IW4511BN derate linearity at 12 mW/°C for temperature range +100 - +125° for IW4511BD derate linearity at 7 mW/° ...
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STATIC ELECTRICAL CHARACTERISTIC Symbol Parameter V Minimum High 0 Level Input Voltage Maximum Low V = 0.5 V ...
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DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter t Propagation Delay PHL Time High-to-Low Level Input (A-D) Propagation Delay Time High-to-Low Level Input BL Propagation Delay Time High-to-Low Level Input LT t Propagation Delay PLH Time Low-to-High Level Input (A-D) Propagation Delay Time ...
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CAPACITANCE Symbol Parameter C Input Capacitance 0.9 0 0.1 0.9 a-g Time diagram when taking dynamic parameters V , Guaranteed Limits DD v min - - t LH 0.9 0.5 0.1 t ...
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0.25 (0.010 NOTES: 1. Dimensions “A”, “B” do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side ...