CY7C1334-100AC Cypress Semiconductor Corporation., CY7C1334-100AC Datasheet

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CY7C1334-100AC

Manufacturer Part Number
CY7C1334-100AC
Description
64Kx32 Pipelined SRAM with NoBL Architecture
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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CY7C1334-100AC
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CY7C1334-100AC
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Features
Selection Guide
No Bus Latency and NoBL are trademarks of Cypress Semiconductor.
ZBT is a trademark of Integrated Device Technology.
Cypress Semiconductor Corporation
Logic Block Diagram
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
• Pin compatible and functionally equivalent to ZBT™
• Supports 133-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined
• Byte Write Capability
• 64K x 32 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100-pin TQFP package
• Burst Capability—linear or interleaved burst order
device MT55L64L32P
the need to use OE
operation
— Data is transferred on every clock
— 4.2 ns (for 133-MHz device)
— 5.0 ns (for 100-MHz device)
— 7.0 ns (for 80-MHz device)
— 10.0 ns (for 50-MHz device)
CLK
ADV/LD
BWS
A
OE
CEN
[15:0]
64Kx32 Pipelined SRAM with NoBL™ Architecture
WE
CE
CE
CE
[3:0]
1
2
3
16
and WRITE
CONTROL
LOGIC
3901 North First Street
Commercial
Commercial
16
7C1334-133
Functional Description
The CY7C1334 is a 3.3V, 64K by 32 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1334 is equipped with the advanced No
Bus Latency™ (NoBL™) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of the SRAM, especially in systems that require frequent
Write-Read transitions.The CY7C1334 is pin/functionally com-
patible to ZBT SRAM MT55L64L32P
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal, which
when deasserted suspends operation and extends the previ-
ous clock cycle. Maximum access delay from the clock rise is
4.2 ns (133-MHz device).
Write operations are controlled by the four Byte Write Selects
(BWS
ducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
.
• Low (16.5 mW) standby power
CE
MEMORY
64KX 32
400
4.2
5.0
ARRAY
Data-In REG.
[0-3]
Q
D
) and a Write Enable (WE) input. All writes are con-
32
San Jose
7C1334-100
32
360
5.0
5.0
32
CA 95134
32
7C1334-80
310
7.0
5.0
DQ
1
, CE
[31:0]
CY7C1334
2
August 6, 1999
, CE
408-943-2600
7C1334-50
3
260
5.0
) and an
10

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CY7C1334-100AC Summary of contents

Page 1

... The CY7C1334 is a 3.3V, 64K by 32 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1334 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle ...

Page 2

... V 20 DDQ V 21 SSQ SSQ V 27 DDQ 100-Pin TQFP CY7C1334 2 CY7C1334 DDQ 76 V SSQ SSQ V 70 DDQ 69 DQ ...

Page 3

... Ground for the core of the device. Should be connected to ground of the system. Power supply for the I/O circuitry. Should be connected to a 3.3V power supply. Ground for the I/O circuitry. Should be connected to ground of the system. No Connect. Reserved for drive strength control input. 3 CY7C1334 controls DQ , BWS controls 0 ...

Page 4

... Read/Modify/Write sequences, which can be reduced to sim- ple byte write operations. Because the CY7C1334 is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before present- ing data to the DQ output drivers ...

Page 5

... Burst Write Accesses The CY7C1334 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial ad- [ Cycle Description Truth Table ...

Page 6

... Latch-Up Current .................................................... >200 +150 C Operating Range +125 C 0.5V to +4.6V Range Com’l 0. 0.5V DDQ 0. 0.5V DDQ .Bytes written are determined by BWS . Bytes not selected during byte writes remain unaltered. All I/Os x [3:0] 6 CY7C1334 BWS BWS BWS ...

Page 7

... MHz 1/t MAX CYC 12.5-ns cycle, 80 MHz 20-ns cycle, 50 MHz Test Conditions MHz 3.3V 3.3V DD DDQ R=317 3.3V OUTPUT 5 pF R=351 GND INCLUDING JIG AND 1334-2 SCOPE (b) 7 CY7C1334 Min. Max. Unit 3.135 3.465 V 3.135 3.465 V 2.4 V 0.4 V 2 0.3 0 ...

Page 8

... Min. Max. Min. 7.5 10 2.2 3.5 2.2 3.5 4.2 1.5 1.5 2.0 2.2 0.5 0.5 2.0 2.2 0.5 0.5 2.0 2.2 0.5 0.5 2.0 2.2 0.5 0.5 1.7 2.0 0.5 0.5 2.0 2.2 0.5 0.5 1.5 3.5 1.5 1.5 1.5 [13, 15, 16, 17] 4.2 [13, 15, 16, 17] 1.0 1.0 4.2 is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same EOLZ CHZ CLZ 8 CY7C1334 TQFP Typ. Units Notes 28 C C/W JC -100 -80 -50 Max. Min. Max. Min. Max. 12.5 20.0 4.0 6.0 4.0 6.0 5.0 7.0 10.0 1.5 1.5 2.5 3.0 1.0 1.5 2.5 3.0 1.0 1.5 2.5 3.0 1.0 1.5 2.5 3.0 1.0 1.5 2.5 3.0 1.0 1.5 2.5 3.0 1.0 1.5 3.5 1.5 3 ...

Page 9

... In Out Out defines a write cycle (see Write Cycle Description table). [3: and CE . All chip enables need to be active in order to select DON’T CARE = UNDEFINED 9 CY7C1334 t t CENH CENS RA7 CEN HIGH blocks all synchronous inputs t CHZ Out Out ...

Page 10

... AH AS WA2 CHZ Q1+2 Q1+3 D2 Q1+1 Out Out In Out define a write cycle (see Write Cycle Description table). [3: and CE . All chip enables need to be active in order to select DON’T CARE = UNDEFINED 10 CY7C1334 RA3 t CLZ D2+2 D2+3 D2+1 Out input signals. [3:0] ...

Page 11

... OE Timing Ordering Information Speed (MHz) Ordering Code 133 CY7C1334-133AC 100 CY7C1334-100AC 80 CY7C1334-80AC 50 CY7C1334-50AC Document #: 38-00638-B Package Diagram 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 © Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

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