May 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 24A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Absolute Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage R
Collector Current Continuous at T
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
HGTG24N60D1
(0.125 inch from case for 5s)
PART NUMBER
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
PACKAGING AVAILABILITY
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
TO-247
GE
PACKAGE
o
= 1M
C
C and +150
C
at V
= +25
> +25
|
C
GE
Copyright
J
= +25
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
o
= 15V at T
= +150
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
C
o
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C.
©
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
G24N60D1
Intersil Corporation 1999
o
C
C, Unless Otherwise Specific
= +90
BRAND
o
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
C . . . . . . . . . . . . . . . . . . . . I
HGTG24N60D1
3-103
Package
Terminal Diagram
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
(BOTTOM SIDE
COLLECTOR
METAL)
J
, T
CGR
GES
CES
STG
C25
C90
CM
N-CHANNEL ENHANCEMENT MODE
D
L
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
24A, 600V N-Channel IGBT
JEDEC STYLE TO-247
60A at 0.8 BV
G
HGTG24N60D1
-55 to +150
600
600
125
260
1.0
40
24
96
25
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
C
E
EMITTER
CES
File Number
COLLECTOR
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
GATE
UNITS
W/
o
o
W
V
V
A
A
A
V
-
C
C
o
C
2831.3